17949418. METHOD OF FORMING TRANSITION METAL DICHALCOGENIDE THIN FILM simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHOD OF FORMING TRANSITION METAL DICHALCOGENIDE THIN FILM
Organization Name
Inventor(s)
Kyung-Eun Byun of Seongnam-si (KR)
Hyeonjin Shin of Suwon-si (KR)
Yeonchoo Cho of Seongnam-si (KR)
METHOD OF FORMING TRANSITION METAL DICHALCOGENIDE THIN FILM - A simplified explanation of the abstract
This abstract first appeared for US patent application 17949418 titled 'METHOD OF FORMING TRANSITION METAL DICHALCOGENIDE THIN FILM
Simplified Explanation
The abstract describes a method for creating a thin film of transition metal dichalcogenide on a substrate. This is achieved by treating the substrate with a metal organic material and then introducing a transition metal precursor and a chalcogen precursor to synthesize the transition metal dichalcogenide on the substrate.
- The method involves treating a substrate with a metal organic material.
- A transition metal precursor and a chalcogen precursor are provided around the substrate.
- The transition metal precursor contains a transition metal element.
- The chalcogen precursor contains a chalcogen element.
- The combination of these precursors allows for the synthesis of transition metal dichalcogenide on the substrate.
Potential Applications:
- Thin film electronics
- Optoelectronic devices
- Energy storage devices
- Catalysis
Problems Solved:
- Provides a method for creating transition metal dichalcogenide thin films on substrates.
- Offers a simplified and efficient process for synthesizing these thin films.
Benefits:
- Enables the production of thin films with desirable properties for various applications.
- Offers control over the composition and structure of the thin films.
- Provides a scalable and cost-effective method for manufacturing transition metal dichalcogenide thin films.
Original Abstract Submitted
A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.
