18153912. LOW-STRESS PASSIVATION LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

LOW-STRESS PASSIVATION LAYER

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Hsiang-Ku Shen of Hsinchu City (TW)

Chen-Chiu Huang of Taichung City (TW)

Chia-Nan Lin of Chiayi County (TW)

Man-Yun Wu of Hsinchu (TW)

Wen-Tzu Chen of Taoyuan City (TW)

Sean Yang of New Taipei City (TW)

Dian-Hao Chen of Hsinchu (TW)

Chi-Hao Chang of Taoyuan (TW)

Ching-Wei Lin of Hsinchu City (TW)

Wen-Ling Chang of Miaoli County (TW)

LOW-STRESS PASSIVATION LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18153912 titled 'LOW-STRESS PASSIVATION LAYER

Simplified Explanation

The abstract describes a method for forming semiconductor devices involving patterning a redistribution layer, depositing dielectric and nitride layers, and removing portions of the nitride layer over specific features.

• The method involves receiving a workpiece with a redistribution layer electrically coupled to an interconnect structure.
• The redistribution layer is patterned to create a recess separating two conductive features, with dielectric and nitride layers subsequently deposited.
• Portions of the nitride layer over the corners of the conductive features are then removed.

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.

Problems Solved

This method helps in improving the performance and reliability of semiconductor devices by enhancing the electrical connections and reducing signal interference.

Benefits

The method allows for more precise patterning and deposition of layers, leading to better overall device performance and longevity.

Potential Commercial Applications

The technology could be utilized in the production of high-performance electronic devices for various industries, including telecommunications, computing, and consumer electronics.

Possible Prior Art

One possible prior art could be the use of similar techniques in the fabrication of semiconductor devices, but with variations in the specific materials and processes used.

How does this method compare to existing techniques in terms of cost-effectiveness and scalability?

This article does not provide information on the cost-effectiveness and scalability of the proposed method compared to existing techniques. Further research or data would be needed to address this question.

What are the potential challenges or limitations of implementing this method in large-scale semiconductor manufacturing facilities?

The article does not discuss the potential challenges or limitations of implementing this method in large-scale semiconductor manufacturing facilities. Additional studies or practical applications may be required to address this question.

Original Abstract Submitted

Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.