18170933. ETCHING-DAMAGE-FREE INTERMETAL DIELECTRIC LAYER WITH THERMAL DISSIPATION FEATURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

ETCHING-DAMAGE-FREE INTERMETAL DIELECTRIC LAYER WITH THERMAL DISSIPATION FEATURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Kai-Fang Cheng of Hsinchu (TW)

Cherng-Shiaw Tsai of Hsinchu (TW)

Cheng-Chin Lee of Hsinchu (TW)

Yen-Ju Wu of Hsinchu (TW)

Yen-Pin Hsu of Hsinchu (TW)

Li-Ling Su of Hsinchu (TW)

Ming-Hsien Lin of Hsinchu (TW)

Hsiao-Kang Chang of Hsinchu (TW)

ETCHING-DAMAGE-FREE INTERMETAL DIELECTRIC LAYER WITH THERMAL DISSIPATION FEATURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18170933 titled 'ETCHING-DAMAGE-FREE INTERMETAL DIELECTRIC LAYER WITH THERMAL DISSIPATION FEATURE

Simplified Explanation

The semiconductor device described in the patent application includes a substrate, a dielectric layer with a low-k dielectric material, an interconnect structure, and a thermal dissipation feature.

• The dielectric layer contains silicon carbonitride with a carbon content between 30% and 45%.
• The interconnect structure extends through the dielectric layer.
• The thermal dissipation feature is spaced apart from the interconnect structure.

Potential Applications

This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications, such as microprocessors, memory devices, and communication systems.

Problems Solved

1. Reduced signal interference and crosstalk due to the low-k dielectric material. 2. Improved thermal management with the thermal dissipation feature. 3. Enhanced performance and reliability of semiconductor devices.

Benefits

1. Higher efficiency and speed in electronic devices. 2. Lower power consumption and heat generation. 3. Increased lifespan and durability of semiconductor components.

Original Abstract Submitted

A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.