17836463. METHOD FOR FILLING TRENCH IN SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
METHOD FOR FILLING TRENCH IN SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Andrew Joseph Kelly of Hsinchu (TW)
Chin-Hsiang Lin of Hsinchu (TW)
Chia-Yun Cheng of Hsinchu (TW)
METHOD FOR FILLING TRENCH IN SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17836463 titled 'METHOD FOR FILLING TRENCH IN SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method for coating a semiconductor structure in a semiconductor device using a multi-step procedure. Here are the key points:
- The method involves applying a first solution containing a metal-containing solute onto the semiconductor structure, which includes a feature and a trench.
- The first solution forms a first coating that covers both the feature and the trench.
- The first coating is then heated in a multi-step procedure, starting at a first temperature and then increasing to a second temperature that is not lower than the first temperature.
- This heating process transforms the first coating into a first film.
- Next, a second solution containing the same metal-containing solute is applied onto the first film to form a second coating.
- Similar to the first coating, the second coating is heated in a multi-step procedure, starting at a third temperature and then increasing to a fourth temperature that is not lower than the third temperature.
- This heating process transforms the second coating into a second film.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit fabrication
Problems solved by this technology:
- Provides a method for coating semiconductor structures with a metal-containing solute, ensuring uniform coverage over features and trenches.
- Enables the formation of films through a multi-step heating procedure, enhancing the stability and durability of the coatings.
Benefits of this technology:
- Improved coating process for semiconductor structures, leading to enhanced performance and reliability of semiconductor devices.
- Enables the creation of uniform and durable films, reducing the risk of defects and improving overall device functionality.
Original Abstract Submitted
A method includes: applying a first solution to a semiconductor structure of a semiconductor device to form a first coating, the semiconductor structure including a feature and the trench, the first coating being formed in the trench and over the feature, the first solution containing a metal-containing solute; heating the first coating in a multi-step procedure to turn the first coating into a first film, the multi-step procedure including heating at a first temperature, followed by heating at a second temperature not lower than the first temperature; applying a second solution onto the first film to form a second coating, the second solution containing the metal-containing solute; and heating the second coating in a multi-step procedure to turn the second coating into a second film, the multi-step procedure including heating at a third temperature, followed by heating at a fourth temperature not lower than the third temperature.
