18502583. STACKED STRUCTURE INCLUDING SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Display Co., LTD.)
STACKED STRUCTURE INCLUDING SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Hyun Eok Shin of Gwacheon-si (KR)
Byung Soo So of Yongin-si (KR)
Ju Hyun Lee of Seongnam-si (KR)
STACKED STRUCTURE INCLUDING SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18502583 titled 'STACKED STRUCTURE INCLUDING SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a method of manufacturing a stacked structure with metal buffer layers on a base substrate.
- Form a first metal buffer layer with crystal grains on the base substrate.
- Form a second metal buffer material layer on the first metal buffer layer.
- Crystallize the second metal buffer material layer to form a second metal buffer layer with crystal grains of lower density compared to the first metal buffer layer.
Potential Applications
- Semiconductor manufacturing
- Thin film deposition processes
- Solar cell production
Problems Solved
- Improving the quality of stacked structures
- Enhancing the performance of electronic devices
- Increasing the efficiency of thin film deposition processes
Benefits
- Enhanced crystal structure in metal buffer layers
- Improved adhesion between layers
- Increased reliability and performance of electronic devices
Original Abstract Submitted
A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.
