17850623. STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED GROWTH simplified abstract (Intel Corporation)

STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED GROWTH

Organization Name

Intel Corporation

Inventor(s)

Carl H. Naylor of Portland OR (US)

Kirby Maxey of Hillsboro OR (US)

Kevin P. O'brien of Portland OR (US)

Chelsey Dorow of Portland OR (US)

Sudarat Lee of Hillsboro OR (US)

Ashish Verma Penumatcha of Beaverton OR (US)

Uygar E. Avci of Portland OR (US)

Matthew V. Metz of Portland OR (US)

Scott B. Clendenning of Portland OR (US)

Chia-Ching Lin of Portland OR (US)

Carly Rogan of North Plains OR (US)

Arnab Sen Gupta of Hillsboro OR (US)

STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED GROWTH - A simplified explanation of the abstract

This abstract first appeared for US patent application 17850623 titled 'STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED GROWTH

Simplified Explanation

The abstract of this patent application describes a transistor structure that consists of stacked nanoribbons as a single crystal or monolayer, specifically a transition metal dichalcogenide (TMD) layer, grown on a silicon wafer using a seeding material.

• The transistor structure includes stacked nanoribbons as a single crystal or monolayer.
• The nanoribbons are made of a transition metal dichalcogenide (TMD) layer.
• The TMD layer is grown on a silicon wafer using a seeding material.

Potential Applications:

• This technology can be used in the development of high-performance transistors.
• It can be applied in the field of electronics and semiconductor devices.
• The transistor structure can be utilized in various electronic devices such as computers, smartphones, and IoT devices.

Problems Solved:

• This technology solves the problem of achieving high-performance transistors by utilizing stacked nanoribbons as a single crystal or monolayer.
• It addresses the challenge of growing a TMD layer on a silicon wafer using a seeding material.

Benefits:

• The use of stacked nanoribbons as a single crystal or monolayer improves the performance of transistors.
• The growth of a TMD layer on a silicon wafer using a seeding material provides a reliable and scalable manufacturing process.
• This technology enables the development of more efficient and powerful electronic devices.

Original Abstract Submitted

Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for a transistor structure that includes stacked nanoribbons as a single crystal or monolayer, such as a transition metal dichalcogenide (TMD) layer, grown on a silicon wafer using a seeding material. Other embodiments may be described and/or claimed.