18357293. METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
Contents
- 1 METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
Organization Name
Inventor(s)
Kimihiko Nakatani of Toyama-shi (JP)
Takayuki Waseda of Toyama-shi (JP)
Shoma Miyata of Toyama-shi (JP)
METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18357293 titled 'METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
Simplified Explanation
The technique described in the abstract involves supplying a modifying agent to a substrate to form an inhibitor layer, and then forming a film on the substrate by performing a cycle a predetermined number of times, with each cycle involving supplying a precursor and a reactant to the substrate. The process conditions per cycle are set to be different up to an n-th cycle compared to cycles after the n-th cycle.
- Modifying agent supplied to substrate to form inhibitor layer
- Film formed on substrate by repeating cycle of supplying precursor and reactant
- Process conditions per cycle change up to n-th cycle compared to cycles after n-th cycle
Potential Applications
This technology could be applied in the manufacturing of electronic devices, such as semiconductors, where precise film formation is crucial.
Problems Solved
This technique helps in controlling the film formation process on substrates, ensuring uniformity and quality in the final product.
Benefits
- Improved control over film formation - Enhanced quality and uniformity of films - Potential cost savings in manufacturing processes
Potential Commercial Applications
Optimizing Film Formation Process for Semiconductor Manufacturing
Possible Prior Art
There may be prior art related to techniques for controlling film formation on substrates in various industries, such as semiconductor manufacturing.
Unanswered Questions
How does this technique compare to existing methods for film formation on substrates?
This article does not provide a direct comparison to existing methods, leaving the reader to wonder about the advantages and disadvantages of this new technique.
What specific industries or applications could benefit the most from this technology?
The article does not delve into specific industries or applications that could see the most significant impact from implementing this technique, leaving room for further exploration.
Original Abstract Submitted
There is provided a technique, which includes: (a) supplying a modifying agent to a substrate including a first surface and a second surface to form an inhibitor layer on the first surface and at least a portion of the second surface; and (b) forming a film on the second surface by performing a cycle a predetermined number of times, the cycle including (b1) supplying a precursor to the substrate and (b2) supplying a reactant to the substrate, wherein in (b), a process condition per cycle up to an n-th cycle is set to be different from a process condition per cycle on and after an (n+1)-th cycle, wherein n is an integer of 1 or 2 or more.
