18481444. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18481444 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes various components such as a lower electrode, metal oxide, buffer, oxide channel, gate insulating layer, gate electrode, and upper electrode. The buffer in the device may contain a silicide material.
- Lower electrode on a substrate
- Metal oxide layer on the lower electrode
- Buffer layer containing a silicide material
- Oxide channel within the buffer layer
- Gate insulating layer within the oxide channel
- Gate electrode within the gate insulating layer
- Upper electrode on the gate electrode
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices for various electronic applications such as integrated circuits, memory devices, and sensors.
Problems Solved
This technology addresses the need for improved semiconductor devices with enhanced performance, reliability, and efficiency by incorporating specific materials and structures in the device design.
Benefits
The semiconductor device described in this patent application offers benefits such as increased functionality, higher speed, lower power consumption, and improved overall performance compared to existing devices.
Potential Commercial Applications
- Advanced integrated circuits
- High-speed memory devices
- Sensing and detection systems
Possible Prior Art
One possible prior art in this field could be the use of different materials and structures in semiconductor devices to enhance their performance and functionality.
Unanswered Questions
How does the specific silicide material in the buffer layer contribute to the overall performance of the semiconductor device?
The exact role and impact of the silicide material in the buffer layer on the device's performance are not clearly explained in the abstract. Further details on this aspect would provide a better understanding of the technology.
What are the specific fabrication techniques used to manufacture the semiconductor device with the described components and layers?
The abstract does not mention the specific methods or processes involved in manufacturing the semiconductor device. Understanding the fabrication techniques would be crucial for implementing this technology in practical applications.
Original Abstract Submitted
Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a lower electrode on a substrate, a metal oxide on the lower electrode, a buffer on the metal oxide, an oxide channel in the buffer, a gate insulating layer in the oxide channel, a gate electrode in the gate insulating layer, and an upper electrode on the gate electrode, and the buffer may include a silicide material.
