18359241. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Tomohiro Moriya of Matsumoto-city (JP)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18359241 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
In a portion of a front electrode exposed in an opening of a passivation film, a Ni-deposited film with high solder wettability is provided, separate from the sidewalls of the opening. Metal wiring is soldered to the Ni-deposited film, forming a solder layer only on the Ni-deposited film, preventing contact between the solder layer and the passivation film. The front electrode, containing Al, is covered by a surface oxide film excluding the area with the Ni-deposited film, increasing adhesive strength between the passivation film and a sealant.
- Ni-deposited film with high solder wettability provided on front electrode surface
- Solder layer formed only on Ni-deposited film, preventing contact with passivation film
- Surface oxide film on front electrode increases adhesive strength with passivation film and sealant
Potential Applications
This technology could be applied in the manufacturing of electronic devices, such as semiconductor components, where soldering is required for connecting metal wiring to electrodes.
Problems Solved
This innovation solves the problem of poor adhesive strength between the passivation film, front electrode, and sealant in electronic devices, ensuring secure connections and preventing potential damage.
Benefits
The benefits of this technology include improved reliability and durability of electronic devices, as well as enhanced performance due to secure connections between components.
Potential Commercial Applications
Potential commercial applications of this technology include the production of semiconductor devices, integrated circuits, and other electronic components where reliable soldering and strong adhesive properties are essential for long-term functionality.
Possible Prior Art
One possible prior art could be the use of surface treatments or coatings to improve solder wettability and adhesion in electronic components. Additionally, techniques for passivation film deposition and electrode design may have been previously explored in the field of semiconductor manufacturing.
Unanswered Questions
How does the surface oxide film impact the overall performance of the electronic device?
The surface oxide film plays a crucial role in increasing the adhesive strength between the front electrode, passivation film, and sealant. However, it is essential to understand how this film may affect the electrical properties or thermal characteristics of the device.
Are there any limitations or challenges associated with the implementation of the Ni-deposited film in electronic devices?
While the Ni-deposited film improves solder wettability and prevents contact with the passivation film, there may be challenges related to the deposition process, material compatibility, or long-term reliability that need to be addressed in practical applications.
Original Abstract Submitted
On a surface of a portion of a front electrode exposed in an opening of a passivation film, a Ni-deposited film having high solder wettability is provided apart from the sidewalls of the opening of the passivation film. Metal wiring is soldered to the Ni-deposited film. The solder layer is formed only on the Ni-deposited film and thus, the solder layer and the passivation film do not contact each other. The front electrode contains Al and an entire area of the surface of the front electrode excluding the portion where the Ni-deposited film is formed is covered by a surface oxide film that is constituted by an aluminum oxide film formed by intentionally oxidizing the surface of the front electrode. The surface oxide film intervenes between the front electrode, the passivation film, and a sealant, whereby the adhesive strength of the passivation film and the sealant is increased.
