17700998. METAL GATE FIN ELECTRODE STRUCTURE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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METAL GATE FIN ELECTRODE STRUCTURE AND METHOD

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Shih-Hang Chiu of Taichung (TW)

Wei-Cheng Wang of Hsinchu (TW)

Chung-Chiang Wu of Taichung (TW)

Chi On Chui of Hsinchu (TW)

METAL GATE FIN ELECTRODE STRUCTURE AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 17700998 titled 'METAL GATE FIN ELECTRODE STRUCTURE AND METHOD

Simplified Explanation

The abstract of the patent application describes a technology that replaces the metal gate in a FinFET or nanoFET with a conductive metal fill. The conductive metal fill has a fin shape on its upper surface, which can be used for a self-aligned contact.

  • The technology provides a replacement metal gate for FinFET or nanoFET.
  • The replacement utilizes a conductive metal fill.
  • The conductive metal fill has a fin shape on its upper surface.
  • The fin shape can be used for a self-aligned contact.

Potential Applications

This technology can have various potential applications in the field of semiconductor devices, including:

  • Integrated circuits
  • Microprocessors
  • Memory devices
  • Transistors
  • Logic gates

Problems Solved

The technology addresses several problems in the field of semiconductor devices, such as:

  • Improving the performance and efficiency of FinFET or nanoFET devices.
  • Enhancing the contact between the metal gate and the device structure.
  • Enabling self-aligned contacts for improved manufacturing processes.

Benefits

The technology offers several benefits in the field of semiconductor devices, including:

  • Improved device performance and efficiency.
  • Enhanced contact between the metal gate and the device structure.
  • Simplified manufacturing processes with self-aligned contacts.
  • Potential cost savings in production.


Original Abstract Submitted

Embodiments provide a replacement metal gate in a FinFET or nanoFET which utilizes a conductive metal fill. The conductive metal fill has an upper surface which has a fin shape which may be used for a self-aligned contact.