18119896. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hong Sik Chae of Suwon-si (KR)
Jae Hyoung Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18119896 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a substrate with two supporter patterns spaced vertically from it. A lower electrode hole extends vertically on the substrate, and a lower electrode is present inside the hole, contacting the sidewalls of the supporter patterns. The lower electrode consists of a first layer along a portion of the sidewall and bottom surface of the hole, a second layer between the first layers, and a third layer on the upper surface of the first and second layers. The third layer has a concave sidewall overlapping the second layer in the vertical direction but spaced apart from it.
- The patent application describes a semiconductor device with a unique lower electrode structure.
- The lower electrode has multiple layers, including a concave sidewall on the third layer.
- The second layer is sandwiched between the first layers of the lower electrode.
- The supporter patterns provide vertical spacing and support for the lower electrode.
Potential Applications:
- This technology could be used in the manufacturing of semiconductor devices, such as transistors or capacitors.
- It may find applications in the field of integrated circuits and microelectronics.
Problems Solved:
- The unique lower electrode structure solves the problem of optimizing contact between the lower electrode and the supporter patterns.
- The concave sidewall of the third layer improves the performance and stability of the semiconductor device.
- The vertical spacing and support provided by the supporter patterns help in maintaining the integrity of the lower electrode.
Benefits:
- The improved contact between the lower electrode and the supporter patterns enhances the overall performance of the semiconductor device.
- The concave sidewall of the third layer improves the electrical properties and stability of the device.
- The vertical spacing and support from the supporter patterns ensure the structural integrity of the lower electrode.
Original Abstract Submitted
A semiconductor device includes a substrate, first and second supporter patterns spaced vertically from the substrate, the second supporter pattern being spaced vertically from the first supporter pattern, a lower electrode hole extending vertically on the substrate, a lower electrode inside the lower electrode hole, contacting a sidewall of the first and second supporter patterns, the lower electrode including a first layer along a portion of a sidewall and bottom surface of the lower electrode hole, a second layer between the first layers, and a third layer on an upper surface of the first and second layers, the first and second layers including a material different from the second layer, and a sidewall of at least a portion of the third layer being concave toward the third layer, overlapping the second layer in the vertical direction, and being spaced apart from the second layer in the vertical direction.
