17837048. METHOD OF FABRICATING VOID-FREE CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE simplified abstract (NANYA TECHNOLOGY CORPORATION)
METHOD OF FABRICATING VOID-FREE CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
CHENG-YAN Ji of NEW TAIPEI CITY (TW)
CHU-HSIANG Hsu of NEW TAIPEI CITY (TW)
JING Hsu of KAOHSIUNG CITY (TW)
METHOD OF FABRICATING VOID-FREE CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17837048 titled 'METHOD OF FABRICATING VOID-FREE CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE
Simplified Explanation
The present application describes a method for creating a conductive feature on a substrate. The method involves the following steps:
1. Deposit an insulative layer on the substrate. 2. Form a trench in the insulative layer. 3. Perform a cyclic process consisting of a deposition step and a removal step. 4. Repeat the cyclic process a specific number of times. 5. Fill the trench with the conductive material after the cyclic process.
- The method involves depositing a conductive material in a trench to create a conductive feature.
- The cyclic process ensures the proper deposition and removal of the conductive material.
- The number of times the cyclic process is repeated is predetermined.
- The method allows for precise control over the fabrication of the conductive feature.
Potential Applications
- This method can be used in the fabrication of electronic devices, such as integrated circuits and microchips.
- It can also be applied in the production of sensors, actuators, and other electronic components.
- The method may find use in the development of advanced materials and nanotechnology.
Problems Solved
- The method provides a reliable and controlled way to create a conductive feature on a substrate.
- It eliminates the need for complex and time-consuming fabrication processes.
- The method ensures the uniformity and accuracy of the conductive feature.
Benefits
- The method allows for the efficient and cost-effective production of conductive features.
- It enables the creation of high-quality and precise conductive structures.
- The method can be easily integrated into existing fabrication processes.
Original Abstract Submitted
The present application provides a method of fabricating a conductive feature. The method of fabricating the conductive feature includes steps of depositing an insulative layer on a substrate, forming a trench in the insulative layer, performing a cyclic process comprising a sequence of a deposition step and a removal step to deposit a conductive material in the trench until the deposition step has been performed is equal to a first preset number of times and a number of the times the removal step has been performed is equal to a second preset number of times, and filling the trench with the conductive material after the cyclic process.
