17592995. Fin Field-Effect Transistor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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Fin Field-Effect Transistor Device and Method

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Tsai-Jung Ho of Xihu Township (TW)

Tze-Liang Lee of Hsinchu (TW)

Fin Field-Effect Transistor Device and Method - A simplified explanation of the abstract

This abstract first appeared for US patent application 17592995 titled 'Fin Field-Effect Transistor Device and Method

Simplified Explanation

The abstract describes a method of forming a semiconductor device. Here is a simplified explanation:

  • The method starts by forming a gate structure over a fin that sticks out from a substrate.
  • Source/drain regions are then formed on both sides of the gate structure.
  • A recess is created between the gate spacers of the gate structure by recessing the gate structure below the upper surfaces of the gate spacers.
  • A first layer of a dielectric material is deposited in the recess, covering the sidewalls and bottom of the recess.
  • Portions of the first layer of the dielectric material are removed through a first etching process.
  • After the first etching process, a second layer of the dielectric material is deposited in the recess over the first layer.

Potential applications of this technology:

  • This method can be used in the manufacturing of semiconductor devices, such as transistors, integrated circuits, and microprocessors.
  • It can improve the performance and efficiency of these devices by enhancing the gate structure and reducing leakage currents.

Problems solved by this technology:

  • The method addresses the challenge of forming a recess between gate spacers in a semiconductor device.
  • It provides a reliable and precise way to create the recess, allowing for better control over the device's characteristics.

Benefits of this technology:

  • By forming a recess between gate spacers, the method enables the deposition of multiple layers of dielectric material.
  • This helps in improving the insulation properties of the device and reducing leakage currents.
  • The method also allows for better control over the dimensions and characteristics of the gate structure, leading to enhanced device performance.


Original Abstract Submitted

A method of forming a semiconductor device includes: forming a gate structure over a fin that protrudes above a substrate; forming source/drain regions over the fin on opposing sides of the gate structure; forming a recess between gate spacers of the gate structure by recessing the gate structure below upper surfaces of the gate spacers; depositing a first layer of a dielectric material in the recess along sidewalls and a bottom of the recess; after depositing the first layer, performing a first etching process to remove portions of the first layer of the dielectric material; and after the first etching process, depositing a second layer of the dielectric material in the recess over the first layer of the dielectric material.

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