17838253. SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Yan-Ming Tsai of Miaoli County (TW)

Wei-Yip Loh of Hsinchu City (TW)

Harry Chien of Chandler AZ (US)

Chih-Shiun Chou of Hsinchu City (TW)

Hong-Mao Lee of Hsinchu City (TW)

Chih-Wei Chang of Hsin-Chu (TW)

Ming-Hsing Tsai of Hsinchu (TW)

SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17838253 titled 'SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

Simplified Explanation

The patent application describes a method of forming a semiconductor device. Here are the key points:

  • The method involves providing a substrate with a gate stack, an epitaxial layer, and a dielectric layer.
  • An opening is formed through the dielectric layer to expose the epitaxial layer.
  • A metal silicon-germanide layer is formed on the exposed epitaxial layer. The metal used in this layer has a high melting point of about 1700°C or higher.
  • A connector is then formed over the metal silicon-germanide layer in the opening.

Potential applications of this technology:

  • This method can be used in the manufacturing of various semiconductor devices, such as transistors, integrated circuits, and memory devices.
  • It can be applied in industries that rely on semiconductor technology, including electronics, telecommunications, and computing.

Problems solved by this technology:

  • The use of a metal silicon-germanide layer with a high melting point provides improved thermal stability and reliability to the semiconductor device.
  • The method allows for the formation of a reliable and robust connection between the metal silicon-germanide layer and the connector.

Benefits of this technology:

  • The high melting point metal silicon-germanide layer ensures the stability of the semiconductor device under high-temperature conditions.
  • The reliable connection formed by the connector enhances the overall performance and longevity of the semiconductor device.
  • This method offers a more efficient and cost-effective way of manufacturing semiconductor devices with improved thermal properties.


Original Abstract Submitted

A method of forming a semiconductor device includes following operations. A substrate is provided with a gate stack thereon, an epitaxial layer therein, and a dielectric layer aside the gate stack and over the epitaxial layer. An opening is formed through the dielectric layer, and the opening exposes the epitaxial layer. A metal silicon-germanide layer is formed on the epitaxial layer, wherein the metal silicon-germanide layer includes a metal having a melting point of about 1700° C. or higher. A connector is formed over the metal silicon-germanide layer in the opening.

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