17981049. SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
TOYOTA JIDOSHA KABUSHIKI KAISHA
Inventor(s)
HIROKI Tsuma of Nisshin-shi (JP)
YUJI Nagumo of Nisshin-shi (JP)
MASASHI Uecha of Nisshin-shi (JP)
TERUAKI Kumazawa of Nisshin-shi (JP)
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17981049 titled 'SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a silicon carbide semiconductor device that includes a silicon carbide semiconductor layer and a side silicide layer. The silicon carbide semiconductor layer has a main surface, a rear surface, and a side surface formed by a cleavage plane. The layer also includes a modified layer with a different atomic arrangement structure of silicon carbide near the rear surface. The side silicide layer is made of a metal silicide compound and is located on the side surface of the silicon carbide semiconductor layer, adjacent to the modified layer.
- The silicon carbide semiconductor layer has a modified layer with a different atomic arrangement structure of silicon carbide near the rear surface.
- The side silicide layer is made of a metal silicide compound and is located on the side surface of the silicon carbide semiconductor layer, adjacent to the modified layer.
Potential Applications
- Power electronics
- High-temperature applications
- High-frequency devices
Problems Solved
- Improved thermal stability and electrical performance
- Enhanced device reliability
- Better integration with other components
Benefits
- Higher efficiency and power density
- Increased operating temperature range
- Improved device performance and reliability
Original Abstract Submitted
A silicon carbide semiconductor device includes a silicon carbide semiconductor layer and a side silicide layer. The silicon carbide semiconductor layer includes a silicon carbide single crystal and has a main surface, a rear surface opposite to the main surface, and a side surface connecting the main surface and the rear surface and formed by a cleavage plane. The silicon carbide semiconductor layer further includes a modified layer. The modified layer forms a part of the side surface located close to the rear surface and has an atomic arrangement structure of silicon carbide different from an atomic arrangement structure of the silicon carbide single crystal. The side silicide layer includes a metal silicide that is a compound of a metal element and silicon. The side silicide layer is disposed on the side surface of the silicon carbide semiconductor layer and is adjacent to the modified layer.
