17713014. Semiconductor Device and Method of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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Semiconductor Device and Method of Forming the Same

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Hsin-Hua Lee of Taoyuan City (TW)

Da-Yuan Lee of Jhubei City (TW)

Kuei-Lun Lin of Keelung City (TW)

Semiconductor Device and Method of Forming the Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 17713014 titled 'Semiconductor Device and Method of Forming the Same

Simplified Explanation

The abstract describes a semiconductor device that includes an interfacial layer, a gate dielectric structure, and a gate electrode. The gate dielectric structure consists of two layers of different metal oxides, with the second layer being thicker than the first layer. The oxygen areal density of the first metal oxide is greater than that of the second metal oxide.

  • The semiconductor device includes an interfacial layer, gate dielectric structure, and gate electrode.
  • The gate dielectric structure comprises two layers of metal oxides.
  • The first layer is an oxide of a first metal, and the second layer is an oxide or silicate of a second metal.
  • The first layer is thinner than the second layer.
  • The oxygen areal density of the first metal oxide is higher than that of the second metal oxide.

Potential Applications

  • This semiconductor device can be used in various electronic devices, such as smartphones, tablets, and computers.
  • It can be applied in integrated circuits, memory devices, and microprocessors.
  • The technology can be used in the manufacturing of advanced semiconductor devices for high-performance applications.

Problems Solved

  • The use of two different metal oxide layers in the gate dielectric structure improves the performance and reliability of the semiconductor device.
  • The higher oxygen areal density of the first metal oxide layer enhances the electrical properties of the device.
  • The thicker second metal oxide layer provides better insulation and reduces leakage current.

Benefits

  • The semiconductor device offers improved performance and reliability.
  • It provides better electrical properties and insulation.
  • The technology enables the manufacturing of advanced semiconductor devices for high-performance applications.


Original Abstract Submitted

A semiconductor device is provided in accordance with some embodiments. The semiconductor device includes an interfacial layer disposed over a channel region, a gate dielectric structure disposed over the channel region, and a gate electrode disposed over the gate dielectric structure. The gate dielectric structure includes a first layer of an oxide of a first metal disposed over the interfacial layer and a second layer of an oxide or silicate of a second metal disposed over the first layer. The first layer has a first thickness, and the second layer has second a thickness that is at least three times greater than the first thickness. An oxygen areal density of the oxide of the first metal is greater than an oxygen areal density of the oxide of the second metal.

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