18236056. Integrated Circuitry, Method Used In The Fabrication Of A Vertical Transistor, And Method Used In The Fabrication Of Integrated Circuitry simplified abstract (Micron Technology, Inc.)

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Integrated Circuitry, Method Used In The Fabrication Of A Vertical Transistor, And Method Used In The Fabrication Of Integrated Circuitry

Organization Name

Micron Technology, Inc.

Inventor(s)

Masihhur R. Laskar of Boise ID (US)

Jeffery B. Hull of Boise ID (US)

Hung-Wei Liu of Meridian ID (US)

Integrated Circuitry, Method Used In The Fabrication Of A Vertical Transistor, And Method Used In The Fabrication Of Integrated Circuitry - A simplified explanation of the abstract

This abstract first appeared for US patent application 18236056 titled 'Integrated Circuitry, Method Used In The Fabrication Of A Vertical Transistor, And Method Used In The Fabrication Of Integrated Circuitry

Simplified Explanation

The abstract of the patent application describes integrated circuitry that includes an electronic component and insulative silicon dioxide adjacent to the component. The silicon dioxide has a specific concentration of elemental-form hydrogen (H) and nitrogen (N).

  • The insulative silicon dioxide in the integrated circuitry has a controlled concentration of elemental-form hydrogen and nitrogen.
  • The average concentration of elemental-form hydrogen is between 0.002 and 0.5 atomic percent.
  • The average concentration of elemental-form nitrogen is between 0.005 and 0.3 atomic percent.

Potential Applications:

  • This technology can be applied in the manufacturing of integrated circuits.
  • It can be used in various electronic devices such as smartphones, computers, and microprocessors.

Problems Solved:

  • The controlled concentration of elemental-form hydrogen and nitrogen helps improve the performance and reliability of integrated circuits.
  • It addresses issues related to insulation and protection of electronic components in integrated circuitry.

Benefits:

  • The specific concentration of hydrogen and nitrogen in the insulative silicon dioxide enhances the functionality and durability of integrated circuits.
  • It improves the overall performance and efficiency of electronic devices.
  • The technology provides a more reliable and stable operation of integrated circuits.


Original Abstract Submitted

Integrated circuitry comprises an electronic component. Insulative silicon dioxide is adjacent the electronic component. The insulative silicon dioxide has at least one of (a) and (b), where: (a): an average concentration of elemental-form H of 0.002 to 0.5 atomic percent; and (b): an average concentration of elemental-form N of 0.005 to 0.3 atomic percent. Other embodiments, including method, are disclosed.

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