18151972. HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAINING LAYER AND METHOD OF MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAINING LAYER AND METHOD OF MANUFACTURING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chung-Chieh Hsu of Hsinchu (TW)
Chen-Hao Chiang of Hsinchu (TW)
Min-Chang Ching of Hsinchu (TW)
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAINING LAYER AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18151972 titled 'HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAINING LAYER AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a high electron mobility transistor (HEMT) that includes multiple semiconductor layers and a gate electrode. The key innovation is the use of indium in at least one of the semiconductor layers, which creates a band gap discontinuity. The top layer extends continuously from below the source, below the gate electrode, and to below the drain.
- The HEMT includes a substrate and multiple semiconductor layers.
- One of the semiconductor layers has a band gap discontinuity with the others.
- Indium is used in at least one of the semiconductor layers.
- The top layer extends continuously from below the source, below the gate electrode, and to below the drain.
Potential applications of this technology:
- High-speed electronic devices
- Wireless communication systems
- Satellite communication systems
- Radar systems
- Microwave amplifiers
Problems solved by this technology:
- Improved electron mobility in transistors
- Enhanced performance of electronic devices
- Increased efficiency in wireless communication systems
Benefits of this technology:
- Higher speed and performance in electronic devices
- Improved signal transmission and reception in communication systems
- Reduced power consumption and energy waste in electronic devices
Original Abstract Submitted
A high electron mobility transistor (HEMT) includes a substrate; and a first semiconductor layer over the substrate. The HEMT further includes a second semiconductor layer over the first semiconductor layer, wherein the second semiconductor layer has a band gap discontinuity with the first semiconductor layer, and at least one of the first semiconductor layer or the second semiconductor layer comprises indium. The HEMT further includes a top layer over the second semiconductor layer. The HEMT further includes a gate electrode over the top layer. The HEMT further includes a source and a drain on opposite sides of the gate electrode, wherein the top layer extends continuously from below the source, below the gate electrode, and to below the drain.
