18263920. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
Contents
- 1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
Organization Name
Inventor(s)
Makoto Wada of Nirasaki-shi, Yamanashi (JP)
Ryota Ifuku of Nirasaki-shi, Yamanashi (JP)
Takashi Matsumoto of Nirasaki-shi, Yamanashi (JP)
Hiroki Yamada of Nirasaki-shi, Yamanashi (JP)
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18263920 titled 'SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
Simplified Explanation
The patent application describes a method for processing a substrate by forming a carbon film using plasma of a mixture gas containing a carbon-containing gas at different pressures within a processing container.
- The method involves carrying the substrate into the processing container.
- A first process forms a first carbon film on the substrate using plasma of a first mixture gas at a first pressure.
- A second process changes the pressure in the processing container to a second pressure higher than the first pressure.
Potential Applications
This technology could be applied in semiconductor manufacturing, thin film deposition, and surface coating industries.
Problems Solved
This method allows for the precise control of carbon film formation on substrates, enabling improved performance and functionality of coated materials.
Benefits
- Enhanced substrate surface properties - Increased efficiency in carbon film deposition - Improved adhesion of carbon films to substrates
Potential Commercial Applications
Optimizing carbon film deposition processes for electronic devices, solar panels, and protective coatings.
Possible Prior Art
Prior methods of carbon film deposition may not have provided the same level of control over pressure conditions within the processing container.
Unanswered Questions
How does this method compare to traditional carbon film deposition techniques?
This article does not provide a direct comparison between this method and traditional carbon film deposition techniques. Further research or experimentation may be needed to determine the advantages and limitations of this new approach.
What are the specific parameters for adjusting pressure in the processing container?
The article does not detail the specific parameters or methods for changing the pressure within the processing container. Additional information or experimentation may be required to understand the practical implementation of this aspect of the technology.
Original Abstract Submitted
A substrate processing method of processing a substrate includes: a carry-in process of carrying the substrate into a processing container; a first process of forming a first carbon film on the substrate with plasma of a first mixture gas containing a carbon-containing gas in a state in which interior of the processing container is maintained at a first pressure; and a second process of changing a pressure in the processing container to a second pressure higher than the first pressure.
