18226854. SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Kokusai Electric Corporation)
Contents
- 1 SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS
Organization Name
Inventor(s)
Masahiro Takahashi of Toyama (JP)
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18226854 titled 'SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS
Simplified Explanation
The substrate processing method described in the patent application involves forming a film containing a predetermined element on a substrate by performing a series of cycles. Each cycle includes forming a layer containing the predetermined element and a halogen element, and then removing the gas used in the process before forming the next layer.
- The method involves forming a film on a substrate by repeating a series of cycles.
- Each cycle includes forming a layer with the predetermined element and a halogen element, and then removing the gas before forming the next layer.
Potential Applications
This technology could be applied in the semiconductor industry for manufacturing electronic devices, such as integrated circuits and sensors.
Problems Solved
This method provides a precise and controlled way to deposit films on substrates, which is crucial for the production of high-quality electronic devices.
Benefits
The benefits of this technology include improved film quality, increased efficiency in substrate processing, and enhanced performance of electronic devices.
Potential Commercial Applications
"Advanced Substrate Processing Method for Semiconductor Industry"
Possible Prior Art
Prior art in substrate processing methods may include techniques for film deposition using chemical vapor deposition (CVD) or physical vapor deposition (PVD) processes.
Unanswered Questions
How does this method compare to traditional film deposition techniques in terms of efficiency and film quality?
This article does not provide a direct comparison between this method and traditional techniques like CVD or PVD.
Are there any limitations or challenges in implementing this method on an industrial scale?
The article does not address any potential limitations or challenges that may arise when scaling up this substrate processing method for commercial production.
Original Abstract Submitted
According to one aspect of the present disclosure, there is provided a substrate processing method including: forming a film containing a predetermined element on a substrate by performing a first cycle a first predetermined number of times, the first cycle including: forming a first layer containing the predetermined element by performing a second cycle a second predetermined number of times, wherein a surface of the first layer is halogen-terminated and wherein the second cycle includes: supplying a first gas containing the predetermined element and a halogen element to the substrate; and removing the first gas; and forming a second layer containing the predetermined element by supplying a second gas containing the predetermined element to the substrate.
