17741711. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Eun Sil Park of Hwaseong-si (KR)
Wang Seop Lim of Cheonan-si (KR)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17741711 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device. Here is a simplified explanation of the abstract:
- The method involves forming three preliminary active patterns on a substrate with different intervals between them.
- First and second field insulating layers are then formed between the first and second preliminary active patterns and between the second and third preliminary active patterns, respectively.
- Finally, first to third gate electrodes are formed on first to third active patterns, which are based on the preliminary active patterns and separated by gate isolation structures.
Potential applications of this technology:
- Semiconductor devices used in various electronic devices such as smartphones, computers, and tablets.
- Integrated circuits used in communication systems, automotive electronics, and industrial control systems.
Problems solved by this technology:
- Provides a method for manufacturing semiconductor devices with improved performance and reliability.
- Allows for the precise formation of active patterns and gate electrodes, leading to better functionality and efficiency.
Benefits of this technology:
- Enhanced performance and reliability of semiconductor devices.
- Improved functionality and efficiency due to precise formation of active patterns and gate electrodes.
- Enables the production of high-quality integrated circuits for various applications.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes: forming first to third preliminary active patterns on a substrate to have different intervals therebetween, forming first and second field insulating layers between the first and second preliminary active patterns and between the second and third preliminary active patterns, respectively, and forming first to third gate electrodes respectively on first to third active patterns formed based on the first to third preliminary active patterns, separated by first and second gate isolation structures.
