18340440. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18340440 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the patent application includes multiple channel layers on an active region of a substrate. Each channel layer is surrounded by a gate structure, and a source/drain region contacts the channel layers. The source/drain region consists of a first epitaxial layer with first layers on the side surfaces of the channel layers and a second layer at the lower end of the source/drain region on the active region, containing first impurities. There is also a second epitaxial layer filling the space between the first layers and the second layer, containing second impurities different from the first impurities and having a recessed upper surface. Finally, a third epitaxial layer is on top of the second epitaxial layer, and at least a portion of it does not contain the first and second impurities.
- The patent application describes a semiconductor device with multiple channel layers and a unique source/drain region structure.
- The source/drain region includes a first epitaxial layer with first layers on the side surfaces of the channel layers and a second layer at the lower end, containing first impurities.
- A second epitaxial layer fills the space between the first layers and the second layer, containing second impurities different from the first impurities and having a recessed upper surface.
- A third epitaxial layer is on top of the second epitaxial layer, and at least a portion of it does not contain the first and second impurities.
Potential Applications:
- This semiconductor device could be used in various electronic devices, such as smartphones, tablets, and computers.
- It may find applications in the automotive industry for advanced driver assistance systems (ADAS) or autonomous vehicles.
- The device could be utilized in industrial automation and control systems for improved performance and efficiency.
Problems Solved:
- The unique source/drain region structure helps to enhance the performance and reliability of the semiconductor device.
- It addresses issues related to current leakage and resistance in traditional source/drain regions.
- The design allows for better control of the electrical properties of the device, leading to improved functionality.
Benefits:
- The semiconductor device offers improved performance and efficiency compared to conventional devices.
- It provides better control over electrical properties, resulting in enhanced functionality and reliability.
- The unique source/drain region structure helps reduce current leakage and resistance, leading to improved energy efficiency.
Original Abstract Submitted
A semiconductor device includes a plurality of channel layers on an active region on a substrate, a gate structure surrounding each of the plurality of channel layers, and a source/drain region contacting the plurality of channel layers. The source/drain region comprises a first epitaxial layer including first layers, disposed on side surfaces of the plurality of channel layers, and a second layer, disposed at a lower end of the source/drain region on the active region, and having first impurities, a second epitaxial layer on the active region, filling a space between the first layers and the second layer, having second impurities, different from the first impurities, and having a recessed upper surface, and a third epitaxial layer on the second epitaxial layer. At least a portion of the third epitaxial layer may not include the first impurities and the second impurities.
