17843970. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

SANGGIL Lee of Ansan-si (KR)

SEOKHOON Kim of Suwon-si (KR)

SUNGMIN Kim of Incheon (KR)

JUNGTAEK Kim of Yongin-si (KR)

PANKWI Park of Incheon (KR)

DONGSUK Shin of Suwon-si (KR)

NAMKYU Cho of Yongin-si (KR)

RYONG Ha of Seoul (KR)

YANG Xu of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17843970 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor device that includes a substrate with PMOSFET regions, active patterns, channel patterns, and source/drain patterns. The active patterns have multiple layers including silicon and silicon-germanium, with the width of the silicon-germanium layer changing in a specific manner.

• The semiconductor device includes PMOSFET regions, active patterns, channel patterns, and source/drain patterns.
• The active patterns have multiple layers, including silicon and silicon-germanium.
• The width of the silicon-germanium layer decreases in a downward direction to a maximum value and then increases in the same direction.

Potential applications of this technology:

• This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
• It can be utilized in the manufacturing of integrated circuits and microprocessors.

Problems solved by this technology:

• The use of silicon-germanium in the active patterns helps improve the performance and efficiency of the semiconductor device.
• The specific width variation of the silicon-germanium layer allows for better control of the device's electrical properties.

Benefits of this technology:

• The inclusion of silicon-germanium in the active patterns enhances the device's speed and power efficiency.
• The optimized width variation of the silicon-germanium layer improves the overall performance and reliability of the semiconductor device.

Original Abstract Submitted

Disclosed is a semiconductor device comprising a substrate including first and second PMOSFET regions, first and second active patterns on the first and second PMOSFET regions, first and second channel patterns on the first and second active patterns and each including semiconductor patterns, and first and second source/drain patterns connected to the first and second channel patterns. The first active pattern includes a first lower semiconductor layer, a first middle semiconductor layer, and a first upper semiconductor layer. Each of the first and second lower semiconductor layers includes silicon. The first middle semiconductor layer includes silicon-germanium. The first middle semiconductor layer has a width that decreases in a downward direction to a maximum value and then increases in the downward direction.