There is currently no text in this page. You can search for this page title in other pages, or search the related logs, but you do not have permission to create this page.
Category:H01L29/417
Jump to navigation
Jump to search
(previous page) (next page)
Pages in category "H01L29/417"
The following 200 pages are in this category, out of 435 total.
(previous page) (next page)1
- 17384667. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17453874. SELF ALIGNED TOP CONTACT FOR VERTICAL TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17455935. PARASITIC CAPACITANCE REDUCTION FOR TALL NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17457448. NANOSHEET EPITAXY WITH FULL BOTTOM ISOLATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17458734. Enlarged Backside Contact simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461578. SOURCE/DRAIN STRUCTURES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17463370. FIELD EFFECT TRANSISTOR WITH FIN ISOLATION STRUCTURE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17487301. LATE REPLACEMENT BOTTOM ISOLATION FOR NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17494101. STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17520690. SEMICONDUCTOR DEVICE WITH BOTTOM DIELECTRIC ISOLATION simplified abstract (International Business Machines Corporation)
- 17520697. TRANSISTOR USAGE METERING THROUGH BIAS TEMPERATURE INSTABILITY MONITORING simplified abstract (International Business Machines Corporation)
- 17521083. Single Process Double Gate and Variable Threshold Voltage MOSFET simplified abstract (International Business Machines Corporation)
- 17522015. BOTTOM CONTACT FOR STACKED GAA FET simplified abstract (International Business Machines Corporation)
- 17525173. ARRANGEMENT OF SOURCE OR DRAIN CONDUCTORS OF TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17528279. TUNNEL FIELD EFFECT TRANSISTOR DEVICES simplified abstract (International Business Machines Corporation)
- 17531966. NON-SELF-ALIGNED WRAP-AROUND CONTACT IN A TIGHT GATE PITCHED TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17545074. Contact and Isolation in Monolithically Stacked VTFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545574. GATE ALL-AROUND DEVICE WITH THROUGH-STACK NANOSHEET 2D CHANNEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545610. STACKED FETS WITH NON-SHARED WORK FUNCTION METALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550658. GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550724. SEMICONDUCTOR STRUCTURES WITH WRAP-AROUND CONTACT STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551309. STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL INTEGRATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551829. ANGLED VIA FOR TIP TO TIP MARGIN IMPROVEMENT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.)
- 17643362. STACKED FIELD EFFECT TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17648037. Dummy Hybrid Film for Self-Alignment Contact Formation simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17651347. Dual Damascene Structure in Forming Source/Drain Contacts simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17651671. Isolation Layers for Reducing Leakages Between Contacts simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17651721. TRANSISTOR SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17663278. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17672033. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17677929. DEVICE WITH ALTERNATE COMPLEMENTARY CHANNELS AND FABRICATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17680507. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17692369. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17697400. VERTICAL CHANNEL TRANSISTOR simplified abstract (Samsung Electronics Co., Ltd.)
- 17712319. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17712726. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17717268. SEMICONDUCTOR DEVICE INCLUDING AIR GAP simplified abstract (Samsung Electronics Co., Ltd.)
- 17730928. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17736367. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17766319. VERTICAL FIELD-EFFECT TRANSISTOR AND METHOD FOR FORMING SAME simplified abstract (Robert Bosch GmbH)
- 17781773. OXIDE THIN FILM TRANSISTOR AND PREPARATION METHOD THEREOF, AND DISPLAY DEVICE simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
- 17804397. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17806514. SQUARE-SHAPED CONTACT WITH IMPROVED ELECTRICAL CONDUCTIVITY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17815187. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17818933. 2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 17831513. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17832609. EPITAXIAL FEATURES IN SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17834240. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17834992. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17836399. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837613. SEMICONDUCTOR DEVICE WITH DIELECTRIC LINERS ON GATE REFILL METAL simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17838551. SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17838637. DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES simplified abstract (Intel Corporation)
- 17838646. SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 17838894. CASCADED BIPOLAR JUNCTION TRANSISTOR AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17843970. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17847075. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17848660. VARACTOR DEVICE WITH BACKSIDE ELECTRICAL CONTACT simplified abstract (Intel Corporation)
- 17849424. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849608. FERROELECTRIC DEVICE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849720. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849725. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849734. METHOD FOR FORMING SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850475. CPP-AGNOSTIC SOURCE-DRAIN CONTACT FORMATION FOR GATE-ALL-AROUND DEVICES WITH DIELECTRIC ISOLATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17850782. SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY simplified abstract (Intel Corporation)
- 17851658. SELF-ALIGNED EMBEDDED SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17851985. INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY WITH BACKSIDE POWER DELIVERY simplified abstract (Intel Corporation)
- 17873180. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17875975. SEMICONDUCTOR DEVICE STRUCTURE WITH NANOSTRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17876389. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17877970. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17879134. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17885577. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886805. VIA ALTERNATE NET SPACING simplified abstract (QUALCOMM Incorporated)
- 17887306. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887487. SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887494. SEMICONDUCTOR STRUCTURE AND METHOD MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887600. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17892864. SEMICONDUCTOR DEVICE WITH REVERSE-CUT SOURCE/DRAIN CONTACT STRUCTURE AND METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896093. TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896353. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17897151. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17897201. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17899111. BACKSIDE CONTACTS FOR CELL HEIGHT SCALING simplified abstract (International Business Machines Corporation)
- 17900639. Performance Optimization By Sizing Gates And Source/Drain Contacts Differently For Different Transistors simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17931319. DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932919. SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA simplified abstract (International Business Machines Corporation)
- 17933187. SELF-ALIGNED BACKSIDE CONTACT MODULE FOR 3DIC APPLICATION simplified abstract (QUALCOMM Incorporated)
- 17933568. VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract (QUALCOMM Incorporated)
- 17936393. VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY simplified abstract (International Business Machines Corporation)
- 17936416. VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract (International Business Machines Corporation)
- 17936434. VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS simplified abstract (International Business Machines Corporation)
- 17936825. METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN simplified abstract (International Business Machines Corporation)
- 17936934. METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17936990. CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION simplified abstract (Intel Corporation)
- 17937473. SEMICONDUCTOR DEVICE WITH CMOS INVERTER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17937967. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)
- 17941248. CONTACT JUMPER FOR NON-SELF ALIGNED CONTACT DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943602. BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17945422. MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract (International Business Machines Corporation)
- 17946017. COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 17955677. COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION simplified abstract (International Business Machines Corporation)
- 17957599. VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract (International Business Machines Corporation)
- 17957887. STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract (Intel Corporation)
- 17963031. SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION simplified abstract (International Business Machines Corporation)
- 17969260. Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17970777. SEMICONDUCTOR DEVICE HAVING STEPPED MULTI-STACK TRANSISTOR STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 17979849. SEMICONDUCTOR SUBSTRATE AND ELECTRICAL INSPECTION METHOD simplified abstract (CANON KABUSHIKI KAISHA)
- 17984025. 3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17984042. 3DSFET STANDARD CELL ARCHITECTURE WITH SOURCE-DRAIN JUNCTION ISOLATION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17994031. DISPLAY PANEL AND METHOD FOR FABRICATING SAME simplified abstract (Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.)
- 18047412. Semiconductor Device with Multi-Layer Dielectric and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18047954. OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 18049297. SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18050219. SEMICONDUCTOR DEVICE INCLUDING SELF-ALIGNED CONTACT AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18051034. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18056954. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18071168. VERTICAL FIELD EFFECT TRANSISTOR (VFET) STRUCTURE WITH DIELECTRIC PROTECTION LAYER AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18077281. INTEGRATED CIRCUIT DEVICE INCLUDING GATE CONTACT simplified abstract (Samsung Electronics Co., Ltd.)
- 18081855. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18085871. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18099236. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18106812. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18138877. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18139985. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18149734. VERTICALLY STACKED FeFETS WITH COMMON CHANNEL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18151304. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151624. Integrated Circuits With Contacting Gate Structures simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152938. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18152976. SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18153633. SEMICONDUCTOR DEVICE INCLUDING TRENCH STRUCTURE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18155688. THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18155887. SILICIDE-SANDWICHED SOURCE/DRAIN REGION AND METHOD OF FABRICATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157416. SEMICONDUCTOR DEVICE INCLUDING GRAPHENE simplified abstract (Samsung Electronics Co., Ltd.)
- 18157478. VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL TYPE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18158148. DUAL SIDE CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18160341. INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18163573. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18168504. COMPLEMENTARY FIELD EFFECT TRANSISTOR WITH CONDUCTIVE THROUGH SUBSTRATE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18172240. DEVICE WITH THROUGH VIA AND RELATED METHODS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18176453. NITRIDE SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18177078. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18177909. SEMICONDUCTOR STRUCTURE WITH DIELECTRIC SPACER AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18179059. SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18179059. SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18180720. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18182426. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18188399. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18193758. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18195074. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18195657. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18195749. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18196191. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18197428. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18199516. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18204449. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18231594. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18232640. MOON-SHAPED BOTTOM SPACER FOR VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR (VTFET) DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18234129. CONTACT ARRANGEMENTS FOR TRANSISTORS simplified abstract (Micron Technology, Inc.)
- 18234596. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18244257. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18279220. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Mitsubishi Electric Corporation)
- 18298629. SEMICONDUCTOR STRUCTURE WITH SELF-ALIGNED CONDUCTIVE FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18306004. VERTICALLY STACKED TRANSISTORS AND FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18321275. SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18322234. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18323006. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18331463. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18334849. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18340440. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18350614. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18359241. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18360471. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18362196. 3D MEMORY MULTI-STACK CONNECTION METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18364399. METAL CHALCOGENIDE THIN FILM, THIN-FILM TRANSISTOR INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR simplified abstract (Samsung Display Co., LTD.)
- 18364521. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18368725. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18369236. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18369450. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18370125. WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18370134. WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER WIDTHS simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18370144. WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18373357. WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18373358. WIDE BANDGAP TRANSISTOR LAYOUT WITH FOLDED GATE simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18373360. WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED THROUGH WAFER VIAS OUTSIDE OF TRANSISTOR LAYOUT simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18376549. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18379083. INTEGRATED CIRCUIT DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18379195. THIN FILM TRANSISTOR, ARRAY SUBSTRATE, DISPLAY PANEL, AND METHOD FOR FABRICATING ARRAY SUBSTRATE simplified abstract (WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.)
- 18379731. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18383370. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT DEEP VIA SUBSTRATE CONTACTS FOR SUB-FIN ELECTRICAL CONTACT simplified abstract (Intel Corporation)
- 18387801. DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMNCE OF AN ANTENNA SWITCH simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18396174. INTEGRATED CIRCUIT CONTACT STRUCTURES simplified abstract (Intel Corporation)
- 18403495. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18456419. SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18464839. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18471730. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18476571. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18478410. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)