18085871. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Wandon Kim of Seongnam-si (KR)
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18085871 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device with a substrate, a fin active region, a gate structure, a source/drain region, an insulating structure, and contact structures. One of the contact structures includes a seed layer with lower and upper regions, and a contact plug on the upper region.
- The semiconductor device includes a substrate, a fin active region, a gate structure, a source/drain region, an insulating structure, and contact structures.
- One of the contact structures has a seed layer with lower and upper regions.
- The lower region of the seed layer has a first grain size, while the upper region is amorphous or has a different grain size.
- A contact plug is present on the upper region of the seed layer with a second grain size.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit design and production
Problems solved by this technology:
- Improved contact structure in a semiconductor device
- Enhanced performance and reliability of the device
- Reduction in resistance and leakage current
Benefits of this technology:
- Improved electrical conductivity
- Enhanced device performance
- Increased reliability and lifespan of the semiconductor device
Original Abstract Submitted
A semiconductor device including a substrate; a fin active region on the substrate and extending in a first direction; a gate structure extending across the fin active region and extending in a second direction; a source/drain region in the fin active region on a side of the gate structure; an insulating structure covering the gate structure and the source/drain region; and contact structures penetrating through the insulating structure and respectively connected to the source/drain region and the gate structure, wherein one of the contact structures includes a seed layer on the gate structure or the source/drain regions and including lower and upper regions, the lower region having a first grain size and the upper region being amorphous or having a grain size different from the first grain size, and a contact plug on an upper region of the seed layer and having a second grain size.
