18370125. WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS simplified abstract (SKYWORKS SOLUTIONS, INC.)
Contents
- 1 WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS
Organization Name
Inventor(s)
Guillaume Alexandre Blin of Carlisle MA (US)
WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18370125 titled 'WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS
Simplified Explanation
The abstract describes a transistor with specific regions and electrodes arranged in a particular configuration.
- The transistor includes a first drain region, a first source region, a first active region, a second source region, a second active region, and gate electrode fingers.
- The first source region is located on one side of the first drain region, while the second source region is on the opposite side, displaced from the first source region.
- The first gate electrode finger is positioned over the first active region, and the second gate electrode finger is positioned over the second active region.
Potential Applications
This technology could be applied in the development of advanced electronic devices such as high-performance transistors for integrated circuits.
Problems Solved
This innovation helps in improving the efficiency and performance of transistors by optimizing the arrangement of regions and electrodes within the device.
Benefits
The benefits of this technology include enhanced transistor functionality, increased speed, and improved overall performance of electronic devices.
Potential Commercial Applications
The potential commercial applications of this technology could include the production of faster and more efficient electronic devices for various industries such as telecommunications, computing, and consumer electronics.
Possible Prior Art
One possible prior art for this technology could be the development of similar transistor configurations with different arrangements of regions and electrodes.
Unanswered Questions
How does this transistor configuration compare to traditional transistor designs?
This article does not provide a direct comparison between this transistor configuration and traditional transistor designs. Further research or analysis would be needed to understand the specific advantages and differences between them.
What impact could this technology have on the semiconductor industry?
The article does not discuss the potential impact of this technology on the semiconductor industry. Exploring the implications of adopting this innovation in semiconductor manufacturing could provide valuable insights into its significance and future developments.
Original Abstract Submitted
A transistor comprising a first drain region, a first source region disposed on a first side of the first drain region, a first active region defined between the first drain region and the first source region, a second source region disposed on a second side of the first drain region opposite the first side and displaced in a widthwise direction from the first source region, a second active region defined between the first drain region and the second source region, a first gate electrode finger disposed over the first active region, and a second gate electrode finger disposed over the second active region.
