18373358. WIDE BANDGAP TRANSISTOR LAYOUT WITH FOLDED GATE simplified abstract (SKYWORKS SOLUTIONS, INC.)
Contents
- 1 WIDE BANDGAP TRANSISTOR LAYOUT WITH FOLDED GATE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 WIDE BANDGAP TRANSISTOR LAYOUT WITH FOLDED GATE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
WIDE BANDGAP TRANSISTOR LAYOUT WITH FOLDED GATE
Organization Name
Inventor(s)
Guillaume Alexandre Blin of Carlisle MA (US)
WIDE BANDGAP TRANSISTOR LAYOUT WITH FOLDED GATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18373358 titled 'WIDE BANDGAP TRANSISTOR LAYOUT WITH FOLDED GATE
Simplified Explanation
The abstract describes a field effect transistor integrated within a transistor area, with a contact configuration featuring interleaved contact fingers including gate contact fingers distributed between a source contact finger and a drain contact finger.
- The field effect transistor includes gate contact fingers with electrically connected sections distributed in the transistor area.
- The gate contact fingers are provided between a source contact finger and a drain contact finger of the contact configuration.
Potential Applications
This technology could be applied in the development of advanced electronic devices such as integrated circuits, sensors, and communication systems.
Problems Solved
This innovation helps improve the performance and efficiency of field effect transistors by optimizing the contact configuration within the transistor area.
Benefits
- Enhanced functionality and reliability of field effect transistors - Increased integration density and miniaturization of electronic devices - Improved electrical performance and signal processing capabilities
Potential Commercial Applications
"Optimizing Contact Configuration in Field Effect Transistors for Enhanced Performance"
Possible Prior Art
There may be prior art related to optimizing contact configurations in field effect transistors, but specific examples are not provided in this context.
Unanswered Questions
How does this technology compare to existing contact configurations in field effect transistors?
The article does not provide a direct comparison between this technology and other contact configurations in field effect transistors.
What specific improvements in performance can be expected from implementing this contact configuration in field effect transistors?
The article does not detail the specific performance enhancements that can be achieved by utilizing this contact configuration.
Original Abstract Submitted
Disclosed in a field effect transistor integrated within an associated transistor area, the field effect transistor comprising a contact configuration with interleaved contact fingers including gate contact fingers having electrically connected gate contact finger sections being distributed in the transistor area and being provided between a source contact finger and a drain contact finger of the contact configuration.
