17887487. SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Pinyen Lin of Rochester NY (US)

Chung-Liang Cheng of Changhua County (TW)

Lin-Yu Huang of Hsinchu (TW)

Li-Zhen Yu of New Taipei City (TW)

Huang-Lin Chao of Hillsboro OR (US)

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17887487 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The semiconductor device described in the patent application includes semiconductor channel sheets, source and drain regions, a gate structure, a silicide layer, and a contact structure.

• Semiconductor channel sheets are arranged in parallel and spaced apart from each other.
• Source and drain regions are located beside the semiconductor channel sheets.
• The gate structure surrounds the semiconductor channel sheets.
• A silicide layer is on the source or drain region.
• The contact structure includes a metal contact and a liner, with the silicide layer in contact with the metal contact.

• • Potential Applications:**

- This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications.

• • Problems Solved:**

- Provides a more efficient and reliable way to create semiconductor devices with improved performance.

• • Benefits:**

- Enhanced performance and reliability of semiconductor devices. - Improved manufacturing process for semiconductor devices.

Original Abstract Submitted

A semiconductor device and the manufacturing method thereof are described. The device includes semiconductor channel sheets, source and drain regions and a gate structure. The semiconductor channel sheets are arranged in parallel and spaced apart from one another. The source and drain regions are disposed beside the semiconductor channel sheets. The gate structure is disposed around and surrounding the semiconductor channel sheets. The silicide layer is disposed on the source region or the drain region. A contact structure is disposed on the silicide layer on the source region or the drain region. The contact structure includes a metal contact and a liner, and the silicide layer is in contact with the metal contact, and the liner is separate from the silicide layer by the metal contact.