18160341. INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jongjin Lee of Clifton Park NY (US)

Tae Sun Kim of Ballston Spa NY (US)

Wonhyuk Hong of Clifton Park NY (US)

Seungchan Yun of Waterford NY (US)

Kang-Ill Seo of Springfield VA (US)

INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18160341 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME

Simplified Explanation

The abstract describes a method of forming integrated circuit devices by providing a substrate structure, forming preliminary transistor structures, replacing a portion of the bottom insulator with a bottom semiconductor layer, forming a source/drain region, replacing the substrate and semiconductor region with a backside insulator, and forming a power contact and power rail.

• Substrate structure provided
• Preliminary transistor structures formed
• Bottom insulator replaced with bottom semiconductor layer
• Source/drain region formed
• Substrate and semiconductor region replaced with backside insulator
• Power contact and power rail formed

Potential Applications

This technology could be applied in the manufacturing of advanced integrated circuit devices for various electronic applications such as smartphones, computers, and other electronic devices.

Problems Solved

This technology solves the problem of improving the performance and efficiency of integrated circuit devices by optimizing the structure and materials used in their fabrication.

Benefits

The benefits of this technology include enhanced performance, increased efficiency, and potentially reduced power consumption in integrated circuit devices.

Potential Commercial Applications

The potential commercial applications of this technology could be in the semiconductor industry for the production of high-performance integrated circuit devices.

Possible Prior Art

One possible prior art for this technology could be the use of similar methods and structures in the fabrication of integrated circuits, but with different materials or processes.

How does this technology compare to existing methods in terms of cost-effectiveness?

This article does not provide information on the cost-effectiveness of this technology compared to existing methods. Further research or analysis would be needed to determine the cost implications of implementing this innovation.

What impact could this technology have on the overall performance of integrated circuit devices?

While the article mentions improved performance as a benefit of this technology, it does not quantify or specify the potential impact on the overall performance of integrated circuit devices. Additional testing or studies may be required to assess the full extent of performance enhancements.

Original Abstract Submitted

Integrated circuit devices and methods of forming the same are provided. The methods may include providing a substrate structure including a substrate, a bottom insulator and a semiconductor region between the substrate and the bottom insulator, the semiconductor region extending in a first direction; forming first and second preliminary transistor structures on the bottom insulator, wherein and the bottom insulator may include first and second portions that the first and second preliminary transistor structures respectively overlap, and a third portion between the first and second portions; replacing the third portion of the bottom insulator with a bottom semiconductor layer; forming a source/drain region between the first and second preliminary transistor structures; replacing the substrate and the semiconductor region with a backside insulator; forming a power contact in the backside insulator, wherein the source/drain region may overlap the power contact; and forming a power rail.