18157416. SEMICONDUCTOR DEVICE INCLUDING GRAPHENE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE INCLUDING GRAPHENE
Organization Name
Inventor(s)
Keunwook Shin of Suwon-si (KR)
Changhyun Kim of Suwon-si (KR)
Kyung-Eun Byun of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING GRAPHENE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18157416 titled 'SEMICONDUCTOR DEVICE INCLUDING GRAPHENE
Simplified Explanation
The abstract describes a semiconductor device that includes a substrate with a source region and a drain region in a trench, a gate insulating layer in the trench, and a gate electrode in the trench. The gate electrode has a lower filling portion and an upper filling portion surrounded by the gate insulating layer. The lower filling portion is made of a first conductive layer surrounded by the gate insulating layer and fills the lower region of the trench. The upper filling portion is made of a second conductive layer surrounded by the gate insulating layer and fills the upper region of the trench. The first conductive layer is graphene doped with metal.
- The semiconductor device has a unique gate electrode structure with a lower filling portion and an upper filling portion.
- The lower filling portion is made of a first conductive layer, which is graphene doped with metal.
- The upper filling portion is made of a second conductive layer.
- The gate electrode structure is surrounded by a gate insulating layer.
- The device is designed to be used in a trench structure on a substrate.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices, such as smartphones, tablets, and computers.
- It can be used in power electronics, integrated circuits, and other semiconductor-based applications.
Problems solved by this technology:
- The unique gate electrode structure provides improved performance and efficiency in semiconductor devices.
- The use of graphene doped with metal in the first conductive layer enhances conductivity and overall device performance.
Benefits of this technology:
- The device offers improved performance and efficiency compared to conventional semiconductor devices.
- The use of graphene doped with metal increases conductivity, leading to better device functionality.
- The gate electrode structure allows for better control and manipulation of the device's electrical properties.
Original Abstract Submitted
A semiconductor device may include a substrate including a source region and a drain region in a trench, a gate insulating layer in the trench, and a gate electrode in the trench. The gate electrode may include a lower filling portion and an upper filling portion surrounded by the gate insulating layer. The lower filling portion may include a first conductive layer surrounded by the gate insulating layer and may fill a lower region of the trench. The upper filling portion may include a second conductive layer surrounded by the gate insulating layer and may fill an upper region of the trench. The first conductive layer may include graphene doped with metal.
