18234596. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
- 1.9.3 What are the specific manufacturing processes involved in creating the unique height relationships between the components in this semiconductor device?
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sung Hwan Kim of Suwon-si (KR)
Heung Seok Ryu of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18234596 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a unique structure with gate structures, source/drain patterns, silicide mask patterns, and contact silicide films. The height relationships between these components are carefully designed to optimize the device's performance.
- Gate structures with gate electrodes extend in one direction
- Source/drain patterns are located between gate structures
- Silicide mask patterns are on the source/drain patterns
- Source/drain contacts are connected to the source/drain patterns
- Contact silicide film is between the source/drain contact and the source/drain pattern
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and automotive systems.
Problems Solved
This innovation helps improve the performance and efficiency of semiconductor devices by optimizing the height relationships between different components, leading to better electrical connectivity and overall functionality.
Benefits
The benefits of this technology include enhanced device performance, improved reliability, and potentially reduced power consumption in electronic devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for the production of high-performance integrated circuits and other electronic components.
Possible Prior Art
One possible prior art for this technology could be the use of silicide materials in semiconductor devices to improve conductivity and reduce resistance in contact areas.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency improvements offered by this innovation.
What are the specific manufacturing processes involved in creating the unique height relationships between the components in this semiconductor device?
The article does not detail the specific manufacturing processes or techniques used to achieve the optimized height relationships between the components in this semiconductor device.
Original Abstract Submitted
A semiconductor device includes an active pattern extending in a first direction, a plurality of gate structures on the active pattern spaced in the first direction, and including a gate electrode extending in a second direction, a source/drain pattern between adjacent gate structures, a silicide mask pattern on the source/drain pattern, an upper surface of the silicide mask pattern being lower than an upper surface of the gate electrode, a source/drain contact on the source/drain pattern connected to the source/drain pattern, and a contact silicide film between the source/drain contact and the source/drain pattern in contact with a bottom surface of the silicide mask pattern, wherein a height from a lowermost part of the source/drain pattern to a lowermost part of the source/drain contact is smaller than a height from the lowermost part of the source/drain pattern to the bottom surface of the silicide mask pattern.
