17384667. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Jung-Hung Chang of Changhua County (TW)

Lo Heng Chang of Hsinchu (TW)

Zhi-Chang Lin of Zhubei City (TW)

Shih-Cheng Chen of New Taipei City (TW)

Chien-Ning Yao of Hsinchu (TW)

Kuo-Cheng Chiang of Zhubei City (TW)

Chih-Hao Wang of Baoshan Township (TW)

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17384667 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The abstract describes a method for forming a semiconductor structure. Here is a simplified explanation of the patent application:

• The method involves creating a fin structure on a substrate, which consists of a protection layer and alternating layers of different semiconductors.
• The fin structure is then etched to create a recess for the source/drain region.
• A sacrificial contact is formed within the recess, and a source/drain feature is added on top of it.
• The first semiconductor layers of the fin structure are removed, resulting in the formation of multiple nanostructures.
• A gate stack is formed around the nanostructures.
• The substrate is removed, exposing the protection layer and the sacrificial contact.
• Finally, the sacrificial contact is replaced with a contact plug.

Potential applications of this technology:

• This method can be used in the fabrication of advanced semiconductor devices, such as transistors.
• It can enable the creation of high-performance and energy-efficient electronic devices.

Problems solved by this technology:

• The method provides a way to form nanostructures, which can enhance the performance of semiconductor devices.
• It allows for precise control over the formation of the source/drain region, improving device characteristics.

Benefits of this technology:

• The method enables the creation of smaller and more efficient semiconductor devices.
• It offers improved control and precision in the fabrication process.
• The resulting devices can have enhanced performance and lower power consumption.

Original Abstract Submitted

A method for forming a semiconductor structure is provided. The method includes forming a fin structure over a substrate. The fin structure includes a protection layer and alternating first and second semiconductor layers over the protection layer. The method also includes etching the fin structure to form a source/drain recess, forming a sacrificial contact in the source/drain recess, forming a source/drain feature over the sacrificial contact in the source/drain recess, removing the first semiconductor layers of the fin structure, thereby forming a plurality of nanostructures, forming a gate stack wrapping around the nanostructures, removing the substrate thereby exposing the protection layer and the sacrificial contact and replacing the sacrificial contact with a contact plug.