18195074. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18195074 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a semiconductor device that includes various layers and structures to improve its performance.
- The device has an active region on a substrate, which extends in one direction.
- A plurality of semiconductor layers are stacked vertically on the active region, with lower and upper layers.
- A gate structure is present on the substrate, intersecting the active region and the semiconductor layers.
- A source/drain region is located on the active region and contacts the semiconductor layers.
- The source/drain region includes first epitaxial layers on the side surface of the lower semiconductor layer and a second layer on the active region.
- A second epitaxial layer contacts the side surface of the upper semiconductor layer.
- The first layer is positioned between the second epitaxial layer and the side surface of the lower semiconductor layer.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
- It can also be utilized in power electronics, automotive electronics, and communication devices.
Problems solved by this technology:
- The device addresses the need for improved performance and efficiency in semiconductor devices.
- It provides a solution for reducing power consumption and enhancing overall device performance.
Benefits of this technology:
- The semiconductor device offers improved performance and efficiency compared to existing devices.
- It enables reduced power consumption, leading to longer battery life in portable devices.
- The device can handle higher power levels and operate at higher frequencies, making it suitable for various applications.
Original Abstract Submitted
A semiconductor device includes: an active region on a substrate extending in a first direction; a plurality of semiconductor layers spaced apart from each in a vertical direction on the active region, the plurality of semiconductor layers including lower and upper semiconductor layers; a gate structure on the substrate extending in a second direction to intersect the active region and the plurality of semiconductor layers; and a source/drain region on the active region and contacting the plurality of semiconductor layers. The source/drain region includes first epitaxial layers, including first layers on a side surface of the lower semiconductor layer and a second layer provided on and contacting the active region, and a second epitaxial layer contacts a side surface of the upper semiconductor layer in the first direction, and the first layer is between the second epitaxial layer and the side surface of the lower semiconductor layer.
