17879134. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Shin Cheol Min of Seoul (KR)

Keon Yong Cheon of Yongin-si (KR)

Myung Dong Ko of Hwaseong-si (KR)

Yong Hee Park of Hwaseong-si (KR)

Sang Hyeon Lee of Gwangju-si (KR)

Dong Won Kim of Seongnam-si (KR)

Woo Seung Shin of Siheung-si (KR)

Hyung Suk Lee of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17879134 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes various patterns and structures to improve its performance and functionality. Here are the key points:

• The device has an active pattern, which includes a lower pattern and sheet patterns that are spaced apart from the lower pattern.
• A gate structure is present on the lower pattern, consisting of a gate electrode and a gate insulating film that surround each of the sheet patterns.
• A gate capping pattern is placed on top of the gate structure, and a gate etching stop pattern is positioned between the gate capping pattern and the gate structure.
• A gate spacer is located along the sidewall of the gate capping pattern.
• A source/drain pattern is formed on the gate structure.
• A gate contact is created through the gate capping pattern and connected to the gate electrode.
• The upper surfaces of the gate contact and gate spacer are coplanar.
• A source/drain contact is placed on the source/drain pattern and connected to it.

Potential applications of this technology:

• Semiconductor devices used in various electronic devices such as smartphones, tablets, computers, and other consumer electronics.
• Integrated circuits used in communication systems, automotive electronics, and industrial equipment.

Problems solved by this technology:

• Improved performance and functionality of semiconductor devices.
• Enhanced integration and miniaturization of electronic components.
• Reduction in power consumption and heat generation.

Benefits of this technology:

• Higher efficiency and reliability of semiconductor devices.
• Increased speed and processing capabilities.
• Cost-effective manufacturing processes.
• Improved overall performance and user experience.

Original Abstract Submitted

A semiconductor device includes an active pattern with a lower pattern and sheet patterns spaced apart from the lower pattern, a gate structure on the lower pattern and having a gate electrode and a gate insulating film that surround each of the sheet patterns, a gate capping pattern on the gate structure, a gate etching stop pattern between the gate capping pattern and the gate structure, a gate spacer along a sidewall of the gate capping pattern, a source/drain pattern on the gate structure, a gate contact through the gate capping pattern and connected to the gate electrode, upper surfaces of the gate contact and gate spacer being coplanar, and a source/drain contact on the source/drain pattern and connected to the source/drain pattern.