18152976. SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

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SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF MANUFACTURING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Duseop Yoon of Suwon-si (KR)

Junyoung Kwon of Suwon-si (KR)

Minsu Seol of Suwon-si (KR)

Minseok Yoo of Suwon-si (KR)

Kyung-Eun Byun of Suwon-si (KR)

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18152976 titled 'SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The abstract of the patent application describes a semiconductor device that includes a two-dimensional material layer, metal islands on the two-dimensional material layer, and a metal layer covering the metal islands. The device is manufactured by forming metal islands on the two-dimensional material layer using a redox method and then forming a metal layer to cover the islands.

  • The semiconductor device includes a two-dimensional material layer.
  • Metal islands are formed on the two-dimensional material layer.
  • A metal layer is formed to cover the metal islands.
  • The device is manufactured using a redox method.

Potential Applications:

  • This technology can be used in the manufacturing of semiconductor devices.
  • It can be applied in the development of advanced electronic devices.
  • The metal islands and metal layer can enhance the performance and functionality of the semiconductor device.

Problems Solved:

  • The technology solves the problem of improving the performance and functionality of semiconductor devices.
  • It addresses the need for more efficient manufacturing methods for semiconductor devices.
  • It provides a solution for incorporating two-dimensional materials into semiconductor devices.

Benefits:

  • The use of metal islands and a metal layer can enhance the conductivity and performance of the semiconductor device.
  • The manufacturing method using a redox method may offer a more efficient and cost-effective approach.
  • The incorporation of two-dimensional materials can enable the development of advanced electronic devices with improved properties.


Original Abstract Submitted

A semiconductor device may include a two-dimensional material layer, one or more metal islands on the two-dimensional material layer, and a metal layer covering the metal islands on the two-dimensional material layer. The semiconductor device may be manufactured by a method including forming metal islands on a two-dimensional material layer using a redox method and forming a metal layer covering the metal islands on the two-dimensional material layer.