18081855. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
Organization Name
Inventor(s)
KANG HUN Moon of SUWON-SI (KR)
CHOEUN Lee of SUWON-SI, GYEONGGI-DO (KR)
YONGUK Jeon of SUWON-SI, GYEONGGI-DO (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18081855 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
Simplified Explanation
The patent application describes a semiconductor device that includes various components such as a substrate, active pattern, channel pattern, source/drain pattern, gate electrode, and inner spacer.
- The substrate contains an active pattern, which serves as the foundation for the device.
- The channel pattern is placed on top of the active pattern and consists of multiple vertically stacked semiconductor patterns that are spaced apart.
- The source/drain pattern is connected to the semiconductor patterns and facilitates the flow of current.
- The gate electrode is positioned on the semiconductor patterns and includes a portion that is located between adjacent semiconductor patterns.
- An inner spacer, made of a crystalline metal oxide expressed by the formula (MO), is placed between the portion of the gate electrode and the source/drain pattern. The metal atom (M) in the formula can be either Mg, Be, or Ga, and (O) represents an oxygen atom.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices such as smartphones, tablets, computers, and other consumer electronics.
- It can also find applications in industrial equipment, automotive electronics, and communication systems.
Problems solved by this technology:
- The use of the inner spacer made of a crystalline metal oxide helps to improve the performance and efficiency of the semiconductor device.
- It provides better control over the flow of current and enhances the overall functionality of the device.
Benefits of this technology:
- The semiconductor device offers improved performance and efficiency compared to existing devices.
- It allows for better integration of components and enhances the overall functionality of electronic devices.
- The use of the inner spacer made of a crystalline metal oxide provides stability and reliability to the device.
Original Abstract Submitted
A semiconductor device includes; a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of spaced apart and vertically stacked semiconductor patterns, a source/drain pattern connected to the plurality of semiconductor patterns, a gate electrode on the plurality of semiconductor patterns, the gate electrode including a portion interposed between adjacent ones of the plurality of semiconductor patterns, and an inner spacer interposed between the portion of the gate electrode and the source/drain pattern, wherein the inner spacer is crystalline metal oxide is expressed by a formula (MO), wherein (O) is an oxygen atom, and (M) is a metal atom selected from a group consisting of Mg, Be, and Ga.
