17458734. Enlarged Backside Contact simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
Enlarged Backside Contact
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Bwo-Ning Chen of Keelung City (TW)
Yin-Pin Wang of Kaohsiung City (TW)
Yuh-Sheng Jean of Hsinchu (TW)
Chang-Miao Liu of Hsinchu City (TW)
Enlarged Backside Contact - A simplified explanation of the abstract
This abstract first appeared for US patent application 17458734 titled 'Enlarged Backside Contact
Simplified Explanation
The abstract describes a method for forming a conductive plug in a substrate using etching and deposition processes. Here is a simplified explanation of the abstract:
- The method starts by etching the backside of a substrate to expose a dummy contact structure.
- A deposition process is then performed to deposit an oxide layer around the dummy contact structure.
- A second etching process is carried out to partially remove the oxide layer.
- A spacer layer is formed around the dummy contact structure.
- Another deposition process is performed to add a second portion of the oxide layer around the spacer layer.
- The spacer layer and the dummy contact structure are removed, leaving an opening.
- Finally, the opening is filled with a conductive material to create a conductive plug.
Potential applications of this technology:
- Semiconductor manufacturing
- Integrated circuit fabrication
- Microelectronics production
Problems solved by this technology:
- Efficient formation of conductive plugs in substrates
- Precise control over the deposition and etching processes
- Minimization of defects and imperfections in the conductive plugs
Benefits of this technology:
- Improved reliability and performance of electronic devices
- Enhanced integration of components in microelectronics
- Cost-effective manufacturing process for conductive plugs
Original Abstract Submitted
A method includes performing a first etching process on a backside of a substrate to expose a dummy contact structure, performing a first deposition process to deposit a first portion of an oxide layer around the dummy contact structure, performing a second etching process to at least partially remove the first portion of oxide layer, forming a spacer layer around the dummy contact structure, performing a second deposition process to form a second portion of the oxide layer around the spacer layer, removing the spacer layer and the dummy contract structure to leave an opening, and filling the opening with a conductive material to form a conductive plug.
