18476571. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
YONG KONG Siew of SUWON-SI (KR)
WEI HSIUNG Tseng of SEONGNAM-SI (KR)
CHANGHWA Kim of HWASEONG-SI (KR)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18476571 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
Simplified Explanation
The abstract describes a semiconductor device that includes various components such as a substrate, gate structure, source/drain region, interlayer insulating layers, contact plugs, metal lines, and metal vias.
- The substrate has an active region where the main operations of the device occur.
- The gate structure is placed on the active region and controls the flow of current.
- The source/drain region is located next to the gate structure in the active region.
- The first and second interlayer insulating layers are sequentially placed on the gate structure and source/drain region.
- The first contact plug connects to the source/drain region through the first interlayer insulating layer.
- The second contact plug connects to the gate structure through the first and second interlayer insulating layers.
- The first metal line is positioned on the second interlayer insulating layer and has a metal via connected to the first contact plug.
- The second metal line is also on the second interlayer insulating layer and directly connected to the second contact plug.
Potential applications of this technology:
- Semiconductor devices such as transistors, integrated circuits, and microprocessors.
- Electronics industry for various electronic devices like smartphones, computers, and tablets.
Problems solved by this technology:
- Efficiently connecting different components of a semiconductor device.
- Providing proper insulation between layers to prevent short circuits.
- Enhancing the performance and reliability of the device.
Benefits of this technology:
- Improved functionality and performance of semiconductor devices.
- Enhanced integration and miniaturization of electronic components.
- Increased efficiency and reliability of electronic devices.
Original Abstract Submitted
A semiconductor device includes a substrate having an active region, a gate structure disposed on the active region, a source/drain region disposed in the active region at a side of the gate structure, a first interlayer insulating layer and a second interlayer insulating layer sequentially disposed on the gate structure and the source/drain region, a first contact plug connected to the source/drain region through the first interlayer insulating layer, a second contact plug connected to the gate structure through the first interlayer insulating layer and the second interlayer insulating layer, a first metal line disposed on the second interlayer insulating layer, and having a metal via disposed in the second interlayer insulating layer and connected to the first contact plug, and a second metal line disposed on the second interlayer insulating layer, and directly connected to the second contact plug.
