18362196. 3D MEMORY MULTI-STACK CONNECTION METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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3D MEMORY MULTI-STACK CONNECTION METHOD

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chia-En Huang of Xinfeng Township (TW)

Meng-Han Lin of Hsinchu (TW)

Ya-Hui Wu of Hsinchu (TW)

3D MEMORY MULTI-STACK CONNECTION METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18362196 titled '3D MEMORY MULTI-STACK CONNECTION METHOD

Simplified Explanation

The abstract describes a memory device that includes a first memory array with multiple memory strings arranged in a grid-like pattern. Each memory string contains multiple memory cells stacked vertically. The device also includes multiple first conductive structures that extend vertically and have a first portion and a second portion. The first portion spans across the memory cells of a corresponding pair of memory strings, while the second portion is positioned above the first portion and extends further in at least one lateral direction.

  • The memory device has a first memory array with memory strings arranged in a grid pattern.
  • Each memory string contains multiple memory cells stacked vertically.
  • The device includes first conductive structures that extend vertically.
  • Each first conductive structure has a first portion and a second portion.
  • The first portion spans across the memory cells of a corresponding pair of memory strings.
  • The second portion is positioned above the first portion and extends further in at least one lateral direction.

Potential Applications:

  • This memory device can be used in various electronic devices, such as smartphones, tablets, and computers.
  • It can be utilized in data storage systems, allowing for efficient and compact memory storage.
  • The device can be integrated into artificial intelligence systems, enabling faster processing and data retrieval.

Problems Solved:

  • The memory device solves the problem of limited memory capacity by utilizing a grid-like arrangement of memory strings.
  • It addresses the need for compact memory storage by stacking multiple memory cells vertically.
  • The device solves the challenge of efficient data retrieval by using first conductive structures that span across memory cells.

Benefits:

  • The memory device offers increased memory capacity due to the grid-like arrangement and vertical stacking of memory cells.
  • It provides faster data retrieval and processing capabilities through the use of first conductive structures.
  • The device allows for more compact memory storage, resulting in smaller and more efficient electronic devices.


Original Abstract Submitted

A memory device includes a first memory array including: a plurality of memory strings spaced from each other along a first lateral direction and a second lateral direction, each of the plurality of memory strings including a plurality of memory cells arranged along a vertical direction; and a plurality of first conductive structures extending along the vertical direction; wherein each of the plurality of first conductive structures includes a first portion and a second portion; wherein the first portion extends across the plurality of memory cells of a corresponding pair of the plurality of memory strings along the vertical direction, and the second portion is disposed over the first portion along the vertical direction; and wherein the second portion extends farther than the first portion along at least one of the first or second lateral direction.

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