17651721. TRANSISTOR SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

TRANSISTOR SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Pei-Wen Wu of Xinfeng Township (TW)

Chun-Hsien Huang of Hsinchu (TW)

Wei-Jung Lin of Hsinchu (TW)

Chih-Wei Chang of Hsinchu (TW)

TRANSISTOR SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17651721 titled 'TRANSISTOR SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME

Simplified Explanation

The patent application describes a method for forming a contact opening on a source/drain region in a semiconductor device. The method involves depositing an inter-layer dielectric (ILD) over the source/drain region and then forming a contact opening through the ILD to expose the source/drain region. A metal-semiconductor alloy region is then formed on the exposed source/drain region.

• The method involves depositing a conductive material on the metal-semiconductor alloy region, which helps to improve the electrical conductivity of the contact.
• An isolation material is deposited along the sidewalls of the contact opening and over the first layer of the conductive material. This isolation material helps to prevent electrical leakage and provides insulation between the conductive material and other components of the device.
• The isolation material is etched to expose the first layer of the conductive material, while still maintaining the isolation material along the sidewalls of the contact opening. This allows for a more precise and controlled deposition of the second layer of the conductive material.
• Finally, a second layer of the conductive material is deposited on top of the first layer, further enhancing the electrical conductivity of the contact.

Potential applications of this technology:

• This method can be used in the manufacturing of semiconductor devices, such as integrated circuits and microprocessors.
• It can help improve the performance and reliability of these devices by enhancing the electrical conductivity of the contacts.

Problems solved by this technology:

• The method provides a reliable and efficient way to form contacts on source/drain regions in semiconductor devices.
• It helps to prevent electrical leakage and improve the electrical conductivity of the contacts, which can enhance the overall performance of the devices.

Benefits of this technology:

• Improved electrical conductivity of the contacts can lead to better device performance and reliability.
• The method allows for precise and controlled deposition of the conductive material, resulting in more accurate and consistent contacts.
• The use of an isolation material helps to prevent electrical leakage and provides insulation between components, reducing the risk of device failure.

Original Abstract Submitted

A method includes depositing an inter-layer dielectric (ILD) over a source/drain region; forming a contact opening through the ILD, wherein the contact opening exposes the source/drain region; forming a metal-semiconductor alloy region on the source/drain region; depositing a first layer of a conductive material on the metal-semiconductor alloy region; depositing an isolation material along sidewalls of the contact opening and over the first layer of the conductive material; etching the isolation material to expose the first layer of the conductive material, wherein the isolation material extends along sidewalls of the contact opening after etching the isolation material; and depositing a second layer of the conductive material on the first layer of the conductive material.