17849424. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wen-Yen Chen of Hsinchu City (TW)
Yee-Chia Yeo of Hsinchu City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17849424 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
Simplified Explanation
The patent application describes a semiconductor device that includes a field effect transistor (FET) and a distributed Bragg reflector (DBR). The FET is placed on one side of a semiconductor substrate, while the DBR is placed on the opposite side. A conductive via passes through the substrate and makes direct electrical contact with the FET's source/drain region. A metal silicide is formed in the source/drain region to reduce contact resistance with the conductive via. The DBR helps protect other regions of the device during laser annealing of the source/drain region.
- A semiconductor device with a field effect transistor (FET) and a distributed Bragg reflector (DBR) is described.
- The FET is placed on one side of a semiconductor substrate, while the DBR is placed on the opposite side.
- A conductive via passes through the substrate and makes direct electrical contact with the FET's source/drain region.
- A metal silicide is formed in the source/drain region to reduce contact resistance with the conductive via.
- The DBR helps protect other regions of the device during laser annealing of the source/drain region.
Potential Applications
- This technology can be used in the manufacturing of semiconductor devices, particularly those with FETs.
- It can improve the performance and reliability of these devices by reducing contact resistance and preventing thermal damage.
Problems Solved
- Contact resistance between the source/drain region and the conductive via is reduced, improving the overall performance of the semiconductor device.
- The DBR protects other regions of the device during laser annealing, preventing thermal damage and ensuring the device's integrity.
Benefits
- Reduced contact resistance improves the efficiency and reliability of the semiconductor device.
- The DBR prevents thermal damage to other regions of the device, enhancing its overall durability and performance.
Original Abstract Submitted
A semiconductor device includes a field effect transistor disposed over a first main surface of a semiconductor substrate, a distributed Bragg reflector disposed over an opposing second main surface of the semiconductor substrate, and a conductive via disposed in the distributed Bragg reflector. The field effect transistor includes a gate structure and a source/drain region. The conductive via passes through the semiconductor substrate and is in direct electrical contact with the source/drain region. A metal silicide is formed in a portion of the source/drain region that is in contact with the conductive via, and thus can reduce contact resistance between the source/drain region and the conductive via. The source/drain region is laser annealed through an opening formed through the distributed Bragg reflector. The distributed Bragg reflector reduces or prevents thermal damage to other regions of the semiconductor device that are protected by the distributed Bragg reflector.
