17849608. FERROELECTRIC DEVICE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

FERROELECTRIC DEVICE AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Hung-Wei Li of Hsinchu (TW)

Sai-Hooi Yeong of Hsinchu (TW)

Chia-Ta Yu of New Taipei (TW)

Chih-Yu Chang of New Taipei (TW)

Wen-Ling Lu of Taoyuan (TW)

Yu-Chien Chiu of Hsinchu (TW)

Ya-Yun Cheng of Taichung (TW)

Mauricio Manfrini of Hsinchu (TW)

Yu-Ming Lin of Hsinchu (TW)

FERROELECTRIC DEVICE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17849608 titled 'FERROELECTRIC DEVICE AND METHODS OF FORMING THE SAME

Simplified Explanation

The abstract describes a memory device and methods of forming it. The memory device includes a gate electrode, a ferroelectric dielectric layer, a metal oxide semiconductor layer, a source feature, and a source extension. The source extension has a larger dimension than the source feature and extends downwardly from it.

• The memory device includes a gate electrode, ferroelectric dielectric layer, metal oxide semiconductor layer, source feature, and source extension.
• The source extension has a larger dimension than the source feature.
• The source extension extends downwardly from the source feature to a lower elevation.
• The memory device is formed by disposing the gate electrode in an insulating material layer, placing the ferroelectric dielectric layer over the gate electrode, adding the metal oxide semiconductor layer, and then adding the source feature and source extension.

Potential Applications

• Memory devices for electronic devices such as computers, smartphones, and tablets.
• Non-volatile memory for data storage.
• High-density memory for increased storage capacity.

Problems Solved

• Provides a memory device with improved performance and reliability.
• Allows for increased storage capacity in memory devices.
• Enhances the functionality of electronic devices by providing efficient memory storage.

Benefits

• Improved performance and reliability of memory devices.
• Increased storage capacity for data storage.
• Enhanced functionality of electronic devices.

Original Abstract Submitted

Various embodiments of the present disclosure provide a memory device and methods of forming the same. In one embodiment, a memory device is provided. The memory device includes a gate electrode disposed in an insulating material layer, a ferroelectric dielectric layer disposed over the gate electrode, a metal oxide semiconductor layer disposed over the ferroelectric dielectric layer, a source feature disposed over the metal oxide semiconductor layer, wherein the source feature has a first dimension, and a source extension. The source extension includes a first portion disposed over the source feature, wherein the first portion has a second dimension that is greater than the first dimension. The source extension also includes a second portion extending downwardly from the first portion to an elevation that is lower than a top surface of the source feature.