18179059. SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)

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SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME

Organization Name

KABUSHIKI KAISHA TOSHIBA

Inventor(s)

Junpei Hisada of Nonoichi Ishikawa (JP)

Hiroaki Katou of Nonoichi Ishikawa (JP)

SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18179059 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME

Simplified Explanation

The semiconductor device described in the abstract includes multiple semiconductor regions, a gate electrode, and two electrodes. Here are the key points of the innovation:

  • The device consists of first to fourth semiconductor regions.
  • The third semiconductor region is located on a portion of the second semiconductor region.
  • The fourth semiconductor region has two portions with different impurity concentrations.
  • The gate electrode faces the second semiconductor region via a gate insulating layer.
  • The second electrode is located on the second and fourth semiconductor regions, contacting the first and second portions.
  • The second electrode includes a connection part that contacts the third semiconductor region and the portion of the second semiconductor region.

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      1. Potential Applications of this Technology

1. Power electronics 2. Semiconductor devices

      1. Problems Solved by this Technology

1. Improved performance and efficiency of semiconductor devices 2. Enhanced control and functionality in electronic circuits

      1. Benefits of this Technology

1. Higher conductivity and lower resistance 2. Better integration and miniaturization of electronic components

      1. Potential Commercial Applications of this Technology
        1. Semiconductor Device Innovation for Enhanced Performance

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      1. Possible Prior Art

There may be prior art related to semiconductor devices with multiple regions and electrodes, but specific examples are not provided in the abstract.

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        1. Unanswered Questions
      1. How does this semiconductor device compare to existing technologies in terms of efficiency and performance?

The abstract does not provide a direct comparison with existing technologies, so it is unclear how this innovation stands out in the market.

      1. What specific industries or applications could benefit the most from this semiconductor device?

While power electronics and general semiconductor applications are mentioned, a more detailed analysis of potential target industries or applications is not provided in the abstract.


Original Abstract Submitted

According to one embodiment, a semiconductor device includes a first electrode, first to fourth semiconductor regions, a gate electrode, and a second electrode. The third semiconductor region is located on a portion of the second semiconductor region. The fourth semiconductor region includes a first portion positioned on the third semiconductor region and a second portion arranged with the first portion in a second direction. A first-conductivity-type impurity concentration of the first portion is less than a first-conductivity-type impurity concentration of the second portion. The gate electrode faces the second semiconductor region via a gate insulating layer in the second direction. The second electrode is located on the second and fourth semiconductor regions. The second electrode contacts the first and second portions. The second electrode includes a connection part that contacts the third semiconductor region and the portion of the second semiconductor region in the second direction.

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