18182426. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yong Seok Kim of Suwon-si (KR)
Hyun Cheol Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18182426 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a substrate, a gate structure, and an active pattern. The gate structure is positioned on the substrate and extends in a first direction, while the active pattern is spaced apart from the substrate in a second direction, extends in a third direction, and penetrates the gate structure. The active pattern contains a two-dimensional material, and the gate structure consists of a gate insulating layer, a lower gate conductive layer, a ferroelectric layer, and an upper gate conductive layer, all stacked sequentially on the active pattern. The gate insulating layer incorporates hexagonal boron nitride (h-BN), and the ferroelectric layer consists of a bilayer of a two-dimensional material.
- The semiconductor device includes a gate structure and an active pattern with a two-dimensional material, allowing for enhanced performance and functionality.
- The gate structure is composed of a gate insulating layer, a lower gate conductive layer, a ferroelectric layer, and an upper gate conductive layer, providing precise control and manipulation of the active pattern.
- The use of hexagonal boron nitride (h-BN) in the gate insulating layer ensures improved electrical insulation and protection.
- The ferroelectric layer, consisting of a bilayer of a two-dimensional material, enables the device to exhibit ferroelectric properties, enhancing its memory and switching capabilities.
Potential Applications
- This semiconductor device can be utilized in various electronic devices, such as smartphones, tablets, and computers, to enhance their performance and functionality.
- It can be employed in memory devices, allowing for faster data storage and retrieval.
- The device's ferroelectric properties make it suitable for use in non-volatile memory applications, where data retention is crucial.
Problems Solved
- The incorporation of a two-dimensional material in the active pattern addresses the limitations of traditional semiconductor devices, providing improved performance and functionality.
- The use of hexagonal boron nitride (h-BN) in the gate insulating layer solves issues related to electrical insulation and protection.
- The ferroelectric layer solves the problem of limited memory and switching capabilities in conventional devices, enabling enhanced data storage and manipulation.
Benefits
- The semiconductor device offers enhanced performance and functionality due to the inclusion of a two-dimensional material in the active pattern.
- The precise control and manipulation provided by the gate structure result in improved device operation and efficiency.
- The use of hexagonal boron nitride (h-BN) in the gate insulating layer ensures better electrical insulation and protection, leading to increased device reliability.
- The ferroelectric properties of the device enable faster data storage and retrieval, enhancing overall device performance.
Original Abstract Submitted
Provided are semiconductor devices. The semiconductor device includes a substrate, a gate structure disposed on the substrate and extending in a first direction, and an active pattern spaced apart from the substrate in a second direction, extending in a third direction, and penetrating the gate structure, wherein the active pattern includes a two-dimensional material, the gate structure comprises a gate insulating layer, a lower gate conductive layer, a ferroelectric layer, and an upper gate conductive layer, which are sequentially stacked on the active pattern, the gate insulating layer includes hexagonal boron nitride (h-BN), and the ferroelectric layer includes a bilayer of a two-dimensional material.
