18373357. WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE simplified abstract (SKYWORKS SOLUTIONS, INC.)
Contents
- 1 WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE
Organization Name
Inventor(s)
Guillaume Alexandre Blin of Carlisle MA (US)
Raymond Mitchell Waugh of Tewksbury MA (US)
Dylan Charles Bartle of Arlington MA (US)
WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18373357 titled 'WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE
Simplified Explanation
The abstract describes a patent application for a field effect transistor integrated within a transistor area, with a contact configuration of interleaved contact fingers including outer drain contact fingers located at opposite edges of the transistor area.
- The field effect transistor is integrated within a specific transistor area.
- The transistor contacts have a contact configuration of interleaved contact fingers.
- The contact fingers include outer drain contact fingers located at opposite edges of the transistor area.
Potential Applications
The technology described in the patent application could be applied in the following areas:
- Integrated circuits
- Electronics manufacturing
- Semiconductor devices
Problems Solved
The innovation addresses the following issues:
- Improving transistor performance
- Enhancing contact configurations
- Optimizing transistor area usage
Benefits
The technology offers the following benefits:
- Increased efficiency in transistor operation
- Enhanced overall device performance
- Improved reliability and longevity
Potential Commercial Applications
The technology could be utilized in various commercial applications, such as:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be the use of similar contact configurations in other types of transistors or semiconductor devices.
Unanswered Questions
How does this technology compare to existing transistor contact configurations?
The article does not provide a direct comparison to existing transistor contact configurations, leaving the reader to wonder about the specific advantages of the proposed configuration.
Are there any limitations or drawbacks to this new contact configuration?
The article does not mention any potential limitations or drawbacks of the new contact configuration, leaving the reader curious about any possible downsides to implementing this technology.
Original Abstract Submitted
Disclosed is a field effect transistor integrated within an associated transistor area, the field effect transistor comprising transistor contacts having a contact configuration of interleaved contact fingers including outer drain contact fingers located at opposite edges of the transistor area.
