18370134. WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER WIDTHS simplified abstract (SKYWORKS SOLUTIONS, INC.)
Contents
- 1 WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER WIDTHS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER WIDTHS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER WIDTHS
Organization Name
Inventor(s)
Guillaume Alexandre Blin of Carlisle MA (US)
WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER WIDTHS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18370134 titled 'WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER WIDTHS
Simplified Explanation
The patent application describes a transistor with multiple active regions and gate electrode fingers.
- The transistor comprises a first drain region, a first source region, a first active region, a second source region, a second active region, and gate electrode fingers.
- The first active region has a different width than the second active region.
- The first gate electrode finger is disposed over the first active region, and the second gate electrode finger is disposed over the second active region.
Potential Applications
This technology could be applied in the development of high-performance electronic devices such as smartphones, tablets, and computers.
Problems Solved
This technology helps improve the efficiency and performance of transistors by optimizing the active regions and gate electrode placement.
Benefits
The benefits of this technology include enhanced transistor performance, increased speed, and reduced power consumption in electronic devices.
Potential Commercial Applications
The potential commercial applications of this technology could include semiconductor manufacturing companies, electronics manufacturers, and research institutions.
Possible Prior Art
One possible prior art could be the development of transistors with multiple active regions and gate electrode fingers in the semiconductor industry.
Unanswered Questions
How does this technology compare to existing transistor designs in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing transistor designs. Further research and testing would be needed to determine the specific advantages and disadvantages of this innovation.
What are the potential challenges or limitations of implementing this technology on a larger scale in commercial electronic devices?
The article does not address the potential challenges or limitations of scaling up this technology for commercial applications. Factors such as manufacturing costs, compatibility with existing technologies, and reliability issues would need to be considered.
Original Abstract Submitted
A transistor comprising a first drain region, a first source region disposed on a first side of the first drain region, a first active region being formed between the first drain region and the first source region, a second source region disposed on a second side of the first drain region opposite the first side, a second active region being formed between the first drain region and the second source region, the first active region having a different width than the second active region, a first gate electrode finger disposed over the first active region, and a second gate electrode finger disposed over the second active region.
