17545574. GATE ALL-AROUND DEVICE WITH THROUGH-STACK NANOSHEET 2D CHANNEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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GATE ALL-AROUND DEVICE WITH THROUGH-STACK NANOSHEET 2D CHANNEL

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Tao Li of Slingerlands NY (US)

Ardasheir Rahman of Schenectady NY (US)

Tsung-Sheng Kang of Ballston Lake NY (US)

SHOGO Mochizuki of Mechanicville NY (US)

GATE ALL-AROUND DEVICE WITH THROUGH-STACK NANOSHEET 2D CHANNEL - A simplified explanation of the abstract

This abstract first appeared for US patent application 17545574 titled 'GATE ALL-AROUND DEVICE WITH THROUGH-STACK NANOSHEET 2D CHANNEL

Simplified Explanation

The abstract describes a semiconductor channel material structure that increases the effective channel area. It achieves this by stacking multiple semiconductor channel material nanosheets and including through-stack semiconductor channel material that extends through the nanosheets.

  • The semiconductor channel material structure consists of stacked nanosheets.
  • Through-stack semiconductor channel material extends through the nanosheets.
  • The structure increases the effective channel area.

Potential Applications

This technology has potential applications in various fields, including:

  • Semiconductor devices
  • Integrated circuits
  • Transistors
  • Nanoelectronics

Problems Solved

The semiconductor channel material structure addresses the following problems:

  • Limited effective channel area in traditional semiconductor structures
  • Inefficient use of space in semiconductor devices
  • Reduced performance due to restricted channel area

Benefits

The benefits of this technology are:

  • Increased effective channel area
  • Improved performance of semiconductor devices
  • Enhanced efficiency in integrated circuits
  • Potential for smaller and more powerful nanoelectronic devices


Original Abstract Submitted

A semiconductor channel material structure is provided that has an improved, i.e., increased, effective channel area. The semiconductor channel material structure includes a plurality of semiconductor channel material nanosheets stacked one atop the other. The increased channel area is afforded by providing at least one through-stack semiconductor channel material that extends through at least one of the semiconductor channel material nanosheets.

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