18047412. Semiconductor Device with Multi-Layer Dielectric and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

Semiconductor Device with Multi-Layer Dielectric and Methods of Forming the Same

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Lin-Yu Huang of Hsinchu (TW)

Sheng-Tsung Wang of Hsinchu (TW)

Jia-Chuan You of Taoyuan County (TW)

Chia-Hao Chang of Hsinchu City (TW)

Tien-Lu Lin of Hsinchu City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Chih-Hao Wang of Hsinchu County (TW)

Semiconductor Device with Multi-Layer Dielectric and Methods of Forming the Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 18047412 titled 'Semiconductor Device with Multi-Layer Dielectric and Methods of Forming the Same

Simplified Explanation

The patent application describes a semiconductor device and a method for manufacturing it. The device includes a fin, a gate structure, and a multi-layer interconnect structure. The interconnect structure consists of three dielectric layers with different materials. The device also includes gate and source/drain contacts within the interconnect structure.

• The semiconductor device includes a fin, gate structure, and multi-layer interconnect structure.
• The interconnect structure has three dielectric layers with different materials.
• The device has gate and source/drain contacts within the interconnect structure.

Potential Applications

This technology can be applied in various semiconductor devices, such as microprocessors, memory chips, and integrated circuits.

Problems Solved

This technology solves the problem of integrating gate and source/drain contacts within a multi-layer interconnect structure, improving the performance and efficiency of the semiconductor device.

Benefits

The use of different materials in the dielectric layers of the interconnect structure allows for better insulation and reduced signal interference. Integrating the gate and source/drain contacts within the interconnect structure simplifies the manufacturing process and improves device performance.

Original Abstract Submitted

Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a fin disposed over a substrate, a gate structure disposed over a channel region of the fin, such that the gate structure traverses source/drain regions of the fin, a device-level interlayer dielectric (ILD) layer of a multi-layer interconnect structure disposed over the substrate, wherein the device-level ILD layer includes a first dielectric layer, a second dielectric layer disposed over the first dielectric layer, and a third dielectric layer disposed over the second dielectric layer, wherein a material of the third dielectric layer is different than a material of the second dielectric layer and a material of the first dielectric layer. The semiconductor device further comprises a gate contact to the gate structure disposed in the device-level ILD layer and a source/drain contact to the source/drain regions disposed in the device-level ILD layer.