18158148. DUAL SIDE CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

DUAL SIDE CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Cheng-Wei Chang of Taipei City (TW)

Shuen-Shin Liang of Hsinchu County (TW)

Sung-Li Wang of Zhubei City (TW)

Hsu-Kai Chang of Hsinchu (TW)

Chia-Hung Chu of Taipei City (TW)

Chien-Shun Liao of New Taipei City (TW)

Yi-Ying Liu of Hsinchu City (TW)

DUAL SIDE CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18158148 titled 'DUAL SIDE CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES

Simplified Explanation

The abstract describes a semiconductor device with dual side source/drain (S/D) contact structures and methods of fabricating it. Here are the bullet points explaining the patent/innovation:

• The semiconductor device has two S/D regions and a nanostructured channel region between them.
• A gate structure surrounds the nanostructured channel region.
• First and second contact structures are placed on the first surfaces of the first and second S/D regions.
• A third contact structure is placed on the second surface of the first S/D region.
• An etch stop layer is placed on the second surface of the second S/D region.
• The third contact structure consists of a metal silicide layer, a silicide nitride layer, and a conductive layer.

Potential applications of this technology:

• This semiconductor device can be used in various electronic devices, such as smartphones, tablets, and computers.
• It can be utilized in the manufacturing of high-performance integrated circuits and microprocessors.
• The dual side source/drain contact structures can enhance the performance and efficiency of the semiconductor device.

Problems solved by this technology:

• The dual side source/drain contact structures provide improved electrical contact and reduced resistance, leading to enhanced device performance.
• The nanostructured channel region helps in achieving better control over the flow of current, resulting in improved transistor characteristics.

Benefits of this technology:

• The semiconductor device with dual side source/drain contact structures offers improved performance, speed, and power efficiency.
• The fabrication methods described in the patent enable the production of these devices with high precision and reliability.
• The use of the etch stop layer and the specific structure of the third contact structure ensures better electrical contact and reduced resistance.

Original Abstract Submitted

A semiconductor device with dual side source/drain (S/D) contact structures and methods of fabricating the same are disclosed. The semiconductor device includes first and second S/D regions, a nanostructured channel region disposed between the first and second S/D regions, a gate structure surrounding the nanostructured channel region, first and second contact structures disposed on first surfaces of the first and second S/D regions, a third contact structure disposed on a second surface of the first S/D region, and an etch stop layer disposed on a second surface of the second S/D region. The third contact structure includes a metal silicide layer, a silicide nitride layer disposed on the metal silicide layer, and a conductive layer disposed on the silicide nitride layer.