18331463. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Changhyun Kim of Suwon-si (KR)
Junyoung Kwon of Suwon-si (KR)
Keunwook Shin of Yongin-si (KR)
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18331463 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME
Simplified Explanation
The semiconductor device described in the patent application consists of the following components:
- Channel: This is a two-dimensional semiconductor material that serves as the main pathway for the flow of electric current.
- Source and Drain Electrodes: These electrodes are connected to opposite sides of the channel and facilitate the movement of electrons.
- Transition Metal Oxide Layer: This layer, which contains a transition metal oxide, is placed on top of the channel.
- Dielectric Layer: This layer, made of a high-k material, is placed on the transition metal oxide layer.
- Gate Electrode: This electrode is positioned on top of the dielectric layer.
Potential applications of this technology:
- Integrated Circuits: The semiconductor device can be used in the fabrication of integrated circuits, enabling the creation of smaller and more efficient electronic devices.
- Transistors: The device can be utilized as a transistor, which is a fundamental building block of electronic circuits.
- Memory Devices: The technology can be employed in the development of memory devices, such as flash memory or random-access memory (RAM).
Problems solved by this technology:
- Performance Enhancement: The use of a two-dimensional semiconductor material and a high-k dielectric layer can improve the performance and efficiency of the device.
- Miniaturization: The semiconductor device allows for the creation of smaller and more compact electronic components, addressing the need for miniaturization in various industries.
- Power Consumption: The technology can potentially reduce power consumption in electronic devices, leading to energy savings.
Benefits of this technology:
- Improved Performance: The combination of a two-dimensional semiconductor material and a high-k dielectric layer can enhance the speed and efficiency of electronic devices.
- Size Reduction: The smaller size of the semiconductor device enables the development of smaller and more portable electronic products.
- Energy Efficiency: The reduced power consumption of devices utilizing this technology contributes to energy efficiency and longer battery life.
Original Abstract Submitted
A semiconductor device includes a channel including a two-dimensional (2D) semiconductor material, a source electrode and a drain electrode electrically connected to opposite sides of the channel, respectively, a transition metal oxide layer on the channel and including a transition metal oxide, a dielectric layer on the transition metal oxide layer and including a high-k material, and a gate electrode on the dielectric layer.
